Ametek Electronics

Additional Information:

• Packaging Details: TO -220

Additional Information:

• Packaging Details: TO 247

IRFP250N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• Advanced process technology

• Dynamic dv/dt rating

• Fast switching

• Fully avalanche rated

• Ease of paralleling

• Simple drive requirements

Detailed Specifications:-

Type Designator: FJAF6810A_J6810A

SMD Transistor Code: J6810A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 1550 V

Maximum Collector-Emitter Voltage |Vce|: 750 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO-3PF

The IRF3205 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-power switching applications. It's a part of the International Rectifier's line of MOSFETs. Here are some key details about the IRF3205:

• Type: N-channel MOSFET
• Package Type: Typically found in a TO-220 package, which is a common DIP (Dual In-line Package) form factor for power MOSFETs.
• Drain-Source Voltage (V_DS): 55V
• Continuous Drain Current (I_D): 120A
• Gate Threshold Voltage (V_GS(th)): Typically between 2.0V and 4.0V
• R_DS(on) (On-Resistance): Typically 0.008 ohms at V_GS = 10V
• Total Gate Charge (Q_G): Around 100 nC (nanoCoulombs)
• Power Dissipation (P_D): 94W (with adequate heatsinking)

• High-Current Switching: Due to its high current rating, it's used in applications like motor drives, power supplies, and high-current switching circuits.
• Power Amplifiers: Suitable for use in circuits requiring high efficiency and low on-resistance.
• DC-DC Converters: Commonly used in power converters and regulators.

• Low On-Resistance: Results in low power loss during conduction.
• High-Speed Switching: Suitable for high-frequency applications.
• Thermal Management: The TO-220 package allows for effective heat dissipation, making it suitable for high-power applications.

1. Gate (G): Controls the MOSFET. A voltage applied to the gate allows or prevents current flow between drain and source.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current flows in

Additional Information:

• Packaging Details: TO 220

Additional Information:

• Packaging Details: TO 247 3 PIN

20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance

Detailed Specifications:-

The 2SC5570 is a high-power NPN transistor, commonly used for audio amplification and switching applications. It is designed to handle high current and has relatively high voltage and power ratings.

Here are some key specifications for the 2SC5570 transistor:

• Type: NPN
• Maximum Collector-Emitter Voltage (Vceo): 80V
• Maximum Collector Current (Ic): 15A
• Power Dissipation (Ptot): 150W
• Current Gain (hFE): 20 to 320 (depending on the specific device)
• Transition Frequency (ft): 40 MHz
• Package Type: TO-3P (a type of metal can package)

This transistor is primarily used in high-power amplification circuits, such as in audio amplifiers, and can also be used for switching applications where high current handling is required.

If you need to know how to incorporate this transistor into a circuit, or if you're looking for an application example (like an audio amplifier circuit), feel free to ask!

• Arrangement: Single.
• Polarity of a transistor: NPN.
• Voltage of the Collector-Emitter VCEO Max: 100 V.
• Base-Emitter Voltage VEBO: 5 V.
• Voltage at the Collector-Base End VCBO: 100 V.
• Maximum direct current 5 A Collector Current.
• 200 uA is the maximum collector cut-off current.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

Features :-

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

• Drain-Source Breakdown Voltage min : 250V
• Temperature Coefficient typ : 0.37V/°C
• Gate-Source Threshold Voltage min : 2.0V
• Gate-Source Threshold Voltage max : 4.0V
• Gate-Source Leakage max : +100nA
• Drain-Source On-State Resistance : 0.28Ω
• Forward Transconductance min : 6.7S

Package Includes :-

1 X IRF244 MOSFET - 250V 15A N-Channel Power MOSFET TO-247 Package

• Collector-emitter voltage:- 1200
• DC collector current:- 40A
• Diode forward current:- 40A
• Power dissipation TC:-  330W

Additional Information:

• Packaging Details: TO 247

The 78xx (sometimes L78xx, LM78xx, MC78xx...) is a family of self-contained fixed linear voltage regulator integrated circuits. The 78xx family is commonly used in electronic circuits requiring a regulated power supply due to their ease-of-use and low cost.

For ICs within the family, the xx is replaced with two digits, indicating the output voltage (for example, the 7805 has a 5-volt output, while the 7812 produces 12 volts). The 78xx line are positive voltage regulators: they produce a voltage that is positive relative to a common ground.

2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching 

• High density cell design for low RDS(ON)

• Voltage controlled small signal switch

• Rugged and reliable

• High saturation current capability

Detailed Specifications:-

These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits

• Drain to Source Breakdown Voltage Minimum : -80V
• Gate to Threshold Voltage Minimum : -2.0V
• Gate to Threshold Voltage Maximum :- -4.0V
• Gate to Source Leakage Current Maximum :- +100nA
• On-State Drain Current Minimum : -2.5V

1 X IRF9513 MOSFET - 80V 2.5A P-Channel Power MOSFET TO-220 Package

2SK1118 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• Advanced Process Technology

• Fast Switching

• Fully Avalanche Rated

• Lead-Free

Detailed Specifications:-

Additional Information:

• Packaging Details: TO 247

Additional Information:

• Packaging Details: TO 220