Binary Semiconductors

Additional Information:

• Delivery Time: 10-14DAYS
• Packaging Details: TO-220F

Additional Information:

• Delivery Time: 10-15DAYS
• Packaging Details: TO-220F

The IRF5305 is a P-channel Power MOSFET designed primarily for switching and power management applications. It is commonly used in high-side load switching because of its P-channel configuration.

• Type: P-Channel MOSFET

• Drain-Source Voltage (Vds): -55V (max)

• Continuous Drain Current (Id): -31A (max) at 25°C

• Rds(on): Typically around 0.02 Ω at Vgs = -10V (low on-resistance for efficient switching)

• Gate Threshold Voltage (Vgs(th)): Typically between -2V to -4V

The IRF840 is an N-channel Power MOSFET designed for high-voltage, high-speed switching applications. It is commonly used in power supplies, inverters, and other high-power applications due to its capability to handle high voltages and currents efficiently.

An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It combines the high input impedance and fast switching of a MOSFET with the low on-state power loss of a bipolar junction transistor (BJT).

The D1128 is an NPN Silicon Darlington Transistor widely used for high current gain applications. It combines two transistors in a Darlington configuration, providing a very high current amplification factor (hFE), making it suitable for switching and amplification purposes.