Binary Semiconductors

Additional Information:

• Delivery Time: 10-14DAYS
• Packaging Details: TO-252 30V 80A N-Channel Enhancement Mode Power MOSFET CHIP IC

Additional Information:

• Delivery Time: 10-14 DAYS
• Packaging Details: SOT23

Additional Information:

• Delivery Time: 10-14 DAYS
• Packaging Details: TO-247

Additional Information:

• Delivery Time: 10-14 DAYS
• Packaging Details: TO-252

Additional Information:

• Delivery Time: 10-14 DAYS
• Packaging Details: TSSOP-16

Additional Information:

• Delivery Time: 10-14 DAYS
• Packaging Details: SOT23-5L

DOPF12N65 is an N-channel Power MOSFET designed for high voltage and high current applications. It typically features:

• Voltage rating (Vds): 650V

• Continuous Drain Current (Id): Around 12A (depending on package and conditions)

• Rds(on): Low on-resistance for efficient switching, typically in the range of a few ohms or milliohms

• Package type: Usually TO-220 or similar, suitable for mounting on heatsinks

Type: NPN Bipolar Junction Transistor (BJT)
Application: High voltage, high current, and high-speed switching applications; often used in audio amplifiers, power supplies, and switching circuits.

Key Features:

• High voltage rating: Typically around 140 V (collector-emitter voltage)

• High current rating: Collector current up to around 8 A

• High power dissipation: Usually around 100 W (with proper heat sinking)

• High gain: Suitable for amplification purposes

• Complementary transistor: Often paired with MJE15033 (PNP counterpart) in push-pull amplifier designs.

The MJE2955T is a PNP power transistor commonly used in medium to high power amplification and switching applications.

• Type: PNP Bipolar Junction Transistor (BJT)

• Package: TO-220 (common for power transistors, allows for easy mounting and heat dissipation)

• Voltage Ratings:

  • Collector-Emitter Voltage (V_CEO): typically around 60V

  • Collector-Base Voltage (V_CBO): around 80V

The MJE15030 is an NPN power transistor commonly used in high voltage and medium power switching applications.

• Type: NPN Bipolar Junction Transistor (BJT)

• Purpose: Designed for power amplification and switching.

• Voltage Ratings:

  • Collector-Emitter Voltage (V_CEO): Typically around 140V

  • Collector-Base Voltage (V_CBO): Around 250V

• Current Rating: Collector current (I_C) usually up to 8A

• Power Dissipation: Around 50W (depending on package and cooling)

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The M51996FP is a voltage regulator IC commonly used in electronic circuits for stabilizing and regulating voltage output.

• Type: Voltage Regulator IC

• Purpose: Provides a stable output voltage regardless of variations in input voltage and load conditions.

• Package: Usually available in a multi-pin package (such as DIP or SOP).

• Application: Power supply circuits, battery-operated devices, consumer electronics, and other systems requiring a stable voltage source.

Type: Insulated Gate Bipolar Transistor (IGBT)
Model Number: K40T1202

Key Features:

• Voltage Rating: Typically, the "1202" suffix suggests a voltage rating around 1200V (1.2 kV). This is common for power IGBTs designed for high voltage switching.

• Current Rating: The "40" usually indicates the collector current rating, often around 40A.

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The DO-7812 is a fixed 12V voltage regulator commonly used in electronic circuits to provide a stable and regulated output voltage of +12 volts. It is designed to maintain a constant output voltage despite variations in input voltage or load current, ensuring reliable operation for sensitive electronic devices.