Digiprotech Markcom India Private Limited

Digiprotech Markcom India Private Limited

Palace Guttahalli, Bengaluru, Karnataka
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Memories

Offering you a complete choice of products which include EEPROM, VRAM, IPEM DDR2, SDRAM MCPs, Flash and Micro Solid State Drive (microSSD) Products.

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EEPROM
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EEPROM

Approx Price: Rs 2,500 /Piece

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The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS¿¿Electrically Erasable Programmable Read Only Memory (EEPROM)¿¿organized as 131, 072 x 8 bits. The AS28C010 is capable of in system¿¿electrical Byte and Page reprogrammability.¿¿The AS28C010 achieves high speed access, low power¿¿consumption, and a high level of reliability by employing advanced¿¿CMOS process and circuitry technology.¿¿This device has a 256-Byte Page Programming function to make¿¿its erase and write operations faster. The AS28C010 features Data¿¿Polling and a Ready/Busy signal to indicate completion of erase and¿¿programming operations.¿¿This EEPROM provides several levels of data protection. Hardware data protection is provided , in addition to noise protection on¿¿the WE signal and write inhibit during power on and off. Software¿¿data protection is implemented using JEDEC Optional Standard¿¿algorithm.
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VRAM
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VRAM

Approx Price: Rs 3,000 /Piece

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The SMJ44C251B/MT42C4256 multiport video RAM is ahigh-speed, dual-ported memory device. It consists of adynamic random-access memory (DRAM) organized as 262144words of 4 bits each interfaced to a serial-data register or serialaccess memory (SAM) organized as 512 words of 4 bits each.The SMJ44C251B/MT42C4256 supports three types ofoperation: random access to and from the DRAM, serial accessto and from the serial register, and bidirectional transfer of databetween any row in the DRAM and the serial register. Exceptduring transfer operations, the SMJ44C251B/MT42C4256 canbe accessed simultaneously and asynchronously from theDRAM and SAM ports.During a transfer operation, the 512 columns of the DRAMare connected to the 512 positions in the serial data register.The 512 × 4-bit serial-data register can be loaded from thememory row (transfer read), or the contents of the 512 × 4-bitserial-data register can be written to the memory row (transferwrite).
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VRAM
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VRAM

Approx Price: Rs 3,000 /Piece

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The SMJ44C251B/MT42C4256 multiport video RAM is a high-speed, dual-ported memory device. It consists of a dynamic random-access memory (DRAM) organized as 262144words of 4 bits each interfaced to a serial-data register or serial access memory (SAM) organized as 512 words of 4 bits each.The SMJ44C251B/MT42C4256 supports three types of operation: random access to and from the DRAM, serial access to and from the serial register, and bidirectional transfer of data between any row in the DRAM and the serial register.

Except during transfer operations, the SMJ44C251B/MT42C4256 can be accessed simultaneously and asynchronously from the DRAM and SAM ports.During a transfer operation, the 512 columns of the DRAM are connected to the 512 positions in the serial data register.The 512 × 4-bit serial-data register can be loaded from the memory row (transfer read), or the contents of the 512 × 4-bitserial-data register can be written to the memory row (transfer write).
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IPEM DDR2
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IPEM DDR2

Approx Price: Rs 3,000 /Piece

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The 2.1Gb DDR2 SDRAM, a high-speed CMOS, dyna micrandom-access memory containing 2,147,483,648 bits.Each of the ve chips in the MCP are internally con guredas 4-bank DRAM.

The 2.1Gb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single read or write access for the x64 DDR2 SDRAM effectively consists of a single 4n-bit-wide, one-clockcycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls.
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SDRAM MCPs
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SDRAM MCPs

Approx Price: Rs 800 /Piece

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Our premier product suite of SDRAM based multi chip modules (MCMs) delivers a high density memory solution that also meets the wide data widths necessary for high reliability defense/aerospace applications. These high-speed memories use a 2n-prefetch architecture with an interface that allows one data word to be transmitted per clock cycle.

Starting at a density of 32MB (256Mb) in x64 and x72 data width configurations, these SDRAM memories provide many benefits such as; space savings versus single die packages including CSPs, reduced I/O routing, reduced component count and placements, and extended temperature range testing including industrial and military.

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Flash
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Flash

Approx Price: Rs 2,500 /Piece

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This device features in-system block locking. They also have a Common FLASH Interface [CFI] that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with for ward and backward compatibility.
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Micro Solid State Drive (microSSD) Products
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Micro Solid State Drive (microSSD) Products

Approx Price: Rs 3,000 /Piece

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Disk Drive Technology has been around for many years but the state-of-the-art has progressed to the point now that many gigabytes of storage can be put into packages half the size of a postage stamp and weighing not much more. Micross Components has developed a family of microSSD products,integrating high density FLASH memory, along with a FLASH memory controller that also handles the ATA/IDE disk drive interface. This packs quite a bit of very reliable storage capability into an extremely small space. These products exhibit several advantages over legacy rotating media. Advantages include low noise, extremely small size and low weight, high reliability, ruggedness and low power consumption.
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DRAM
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DRAM

Approx Price: Rs 3,000 /Piece

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The SMJ416400 series is a set of high-speed16777216-bit dynamic random-accessmemories (DRAMs), organized as 4194304words of four bits each. The series employstechnology for high performance, reliability, andlow power.These devices feature maximum RAS accesstimes of 70 ns, 80 ns, and 100 ns. All inputs,outputs, and clocks are compatible with series 54TTL. All addresses and data-in lines are latchedon-chip to simplify system design. Data out isunlatched to allow greater system flexibility.The SMJ416400 is offered in 450-mil 24/28-pinsurface-mount small-outline leadless chip carrier(FNC suffix), 28-lead flatpack (HKB suffix), and24-lead ZIP (SV suffix) packages. The packagesare characterized for operation from –55°C t
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SRAM
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SRAM

Approx Price: Rs 3,000 /Piece

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The AS5C1008 is a high speed, low power, 128K by 8-bit ruggedized plastic (COTS) CMOS Static RAM. It is fabricated using high performance, CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns (Max) over the military and industrial temperature ranges. When Chip Enable (CE\) is HIGH, the device assumes a standby mode at which the power dissipation can be reduced down to 125mW (max) at CMOS input levels. Easy memory expansion is provided by using asserted LOW CE\ and asserted HIGH CE2, and asserted LOW write enable (WE\) controls both writing and reading of the memory. TheAS5C1008 is pin-compatible with other 128K x 8 SRAM’s in the SOJ package.
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SSRAM
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SSRAM

Approx Price: Rs 3,000 /Piece

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The AS5SP128K32 is a 4.0Mb High Performance Synchronous Pipeline Burst SRAM, available in multiple temperature screening levels, fabricated using High Performance CMOS technology and is organized as a 128K x 32. It integrates address and control registers, a two (2) bit burst address counter supporting four (4) double-word transfers. Writes are internally self-timed and synchronous to the rising edge of clock.The AS5SP128K32 includes advanced control options including Global Write, Byte Write as well as an Asynchronous Output enable. Burst Cycle controls are handled by three (3) input pins, ADV, ADSP\ and ADSC\. Burst operation can be initiated with either the Address Status Processor (ADSP\) or Address Status Cache controller (ADSC\) inputs. Subsequentburst addresses are generated internally in the system’s burstsequence control block and are controlled by Address Advance (ADV) control input
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UVEPROM
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UVEPROM

Approx Price: Rs 3,000 /Piece

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The SMJ27C010A series are 131072 by 8-bit (1048576-bit), ultaviolet (UV) light erasable, electrically programmableread-only memories (EPROMs). These devices are fabricated using power-saving CMOStechnology for high speed and simple interface with MOS andbipolar circuits. All inputs (including program data inputs)can be driven by Series 54 TTL circuits without the use ofexternal pullup resistors. Each output can drive one Series 54TTL circuit without external resistors. The SMJ27C010A EPROM is offered in a ceramicdual-in-line package (J suffix) designed for insertion inmounting-hole rows on 15.2mm (600mil) centers. These EPROMs operate from a single 5V supply (in theread mode), and therefore, are ideal for use inmicroprocessor-based systems. One other 13V supply isneeded for programming. All programming signals are TTLlevel. These devices are programmable using the SNAP! Pulseprogramming algorithm. The SNAP! Pulse programmingalgorithm uses a VPP of 13V and a VCC of 6.5V for a nominalprogramming time of thirteen seconds. For programmingoutside the system, existing EPROM programmers can beused. Locations can be programmed singly, in blocks, or atrandom
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Digiprotech Markcom India Private Limited Satya Palace, 51, Room No. 35 & 36 2nd Main Road, Palace Guttahalli, Palace Guttahalli,
Bengaluru-560003, Karnataka, India

S. N. Purushotham ( Director )
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