Industrial Electronics Components

The CM300DU-24F IGBT Module is a high-performance dual insulated gate bipolar transistor module manufactured by Mitsubishi Electric, designed for efficient high-power switching applications. This module features a voltage rating of 1200V and a current capacity of 300A, making it ideal for use in industrial equipment such as motor drives, inverters, UPS systems, welding machines, and power supplies. It is built in a half-bridge configuration with integrated freewheeling diodes, ensuring smooth current flow and reliable switching performance. The CM300DU-24F offers low conduction and switching losses, excellent thermal stability, and high efficiency even under demanding operating conditions. Its compact, chassis-mount design allows easy installation and effective heat dissipation, ensuring long service life and dependable performance in heavy-duty industrial and automation applications.

The FF200R12KT3 / FF200R12KE3 IGBT Module is a high-performance power semiconductor module manufactured by Infineon Technologies, designed for efficient switching in high-power industrial applications. It features a voltage rating of 1200V and a current capacity of 200A, making it suitable for use in motor drives, inverter systems, UPS, welding equipment, and renewable energy applications. Built in a dual IGBT half-bridge configuration with integrated high-efficiency freewheeling diodes, it ensures smooth operation, reduced switching losses, and improved system reliability. Utilizing advanced TRENCHSTOP™ IGBT technology, the module offers excellent thermal performance, low saturation voltage, and high efficiency under demanding conditions. Its robust 62mm industrial package allows easy installation and effective heat dissipation, ensuring long service life and dependable performance in automation and power control systems. 

The MIG20J103H‑IGBT Module is a Toshiba‑branded IGBT (Insulated Gate Bipolar Transistor) power module designed for efficient high‑power switching in industrial and motor control applications. It is typically rated for around 600 V collector‑emitter voltage and 20 A current, and incorporates a silicon N‑channel IGBT device that combines the high current handling of bipolar transistors with the fast, gate‑controlled switching of MOSFETs. This module is used in inverters, motor drives, power converters, and other systems requiring robust DC‑to‑AC switching, offering reliable performance in demanding environments. 

The SKD146/16-L100 IGBT Module is a high-performance power semiconductor module manufactured by Semikron, designed for efficient power conversion and control in industrial applications. This module features a voltage rating of 1600V and a current capacity of approximately 140–146A, making it suitable for use in motor drives, inverter systems, UPS, and industrial automation equipment. It integrates a three-phase bridge rectifier along with an IGBT braking chopper in a compact SEMIPONT package, reducing circuit complexity and saving installation space. Engineered with advanced DCB (Direct Copper Bonding) technology, it offers excellent thermal conductivity, high reliability, and efficient heat dissipation for stable operation under heavy load conditions. The SKD146/16-L100 provides low power losses, high surge current capability, and long service life, making it an ideal choice for demanding industrial and power electronics applications.

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• Packaging Details: 1600v-125a

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• Delivery Time: SAME DAY

MDD200-26N1 IGBT MODULE
200A-1600V..
The IXYS / Littelfuse MDD200-16N1 Module is a high-power semiconductor device designed for efficient rectification and power conversion in industrial applications. With a voltage rating of 1600V and an average current capacity of up to 224A, this module ensures reliable performance in high-current systems. It features a dual diode (series-connected) configuration, making it suitable for single-phase and three-phase bridge rectifier circuits. Built with advanced planar passivated chip technology and a DCB (Direct Copper Bonded) ceramic baseplate, it offers excellent thermal conductivity, low forward voltage drop, and minimal leakage current for improved efficiency. The module comes in a robust Y4-M6 chassis-mount package with high insulation strength, ensuring durability and safe operation in demanding environments. Widely used in applications such as DC power supplies, PWM inverter input rectification, battery charging systems, and DC motor field supplies, this module is known for its high reliability, long service life, and consistent performance in industrial power electronics systems.

The G50N60RUFD IGBT Diode is a high-performance power semiconductor device manufactured by Fairchild Semiconductor (now onsemi), designed for efficient high-speed switching applications. This IGBT features a voltage rating of 600V and a current capacity of around 50A, making it suitable for use in power electronics such as inverters, UPS systems, motor drives, SMPS, and welding equipment. It comes with an ultra-fast recovery anti-parallel diode, which helps in reducing switching losses and improving overall efficiency. Built in a TO-247 package, the device ensures excellent thermal performance, high reliability, and easy mounting. The G50N60RUFD offers low saturation voltage, fast switching speed, and strong short-circuit capability, making it an ideal choice for demanding industrial and electronic applications requiring stable and efficient power control. 

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• Delivery Time: SAME DAY