- Irf640Npbf Infineon MOSFET Transistor
- IRFZ44NSPBF Infineon MOSFET Transistor
- N Channel IRFZ44NB Infineon Transistor
- Irb4115Pbf N Channel Infineon Transistor
- TIP32C PNP Transistor
- 2N6027 Programmable Unijunction Transistor
- TPN2907A TO92 Power Transistor
- Mmbt2907Alt1G Sot23 SMD Transistor
- IRF3205 PBF MOSFET Transistor
- TIP122 TO220 Power Transistor
Infineon Transistor
| Type | N Channel |
| Channel Type | N Channel |
| Brand | Infineon |
| Maximum Gate Source Voltage | 67 nC @ 10 V |
| Maximum Continuous Drain Current | 200v |
| Mounting Type | Through Hole |
| Part Number | irf640nbf |
| Maximum Drain Source Resistance | 0.15ohm |
| Maximum Operating Temperature | -55 DegreeC ~ 175 DegreeC (TJ) |
| Forward Transconductance | Min: 6.8 S. Height: 15.65 mm. Length: 10 mm. Produc |
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Additional Information:
- Item Code: me1111
- Delivery Time: Order today, ships today.
- Packaging Details: the packaging type may change when product is purchased at quantities beneath the standard package. ; Type.
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| Channel Type | N Channel |
| Type | N Channel |
| Brand | INFINEON |
| Part Number | IRFZ44NSPBF |
| Mounting Type | SMD |
| Maximum Gate Source Voltage | 55V |
| Maximum Continuous Drain Current | 49A |
| Maximum Drain Source Resistance | 17.5 mOhms |
| Maximum Operating Temperature | - 55 C TO + 175 C |
| Pin Count | 3 |
| Package Body Material | D2PAK |
MOSFET 60V 1 N-CH HEXFET 17.5mOhms 16.7nC
IRFZ44NSTRLPBF International Rectifier (Infineon Technologies) distributor ... Detailed Description: N-Channel 100V 33A (Tc) 130W (Tc) Surface Mount D2PAK.
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| Transistor Type | NPN |
| Mounting Type | SMD |
| Current | 10A |
| Voltage | 220V |
| Material | Aluminum And Carbon |
| No of Pins | 3 |
| Usage | Low Noise And High Linearity Application |
The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting. Hence it is commonly used with microcontrollers to drive with 5V
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Irb4115Pbf N Channel Infineon Transistor
₹ 80/PieceGet Latest Price
Minimum Order Quantity: 1000 Piece
| Transistor Type | NPN |
| Mounting Type | SMD |
| Current | 10A |
| Voltage | 220V |
| Pin Count | 3 |
| Material | Aluminum And Carbon |
| Usage | Low Noise And High Linearity Application |
IRFB4115PBF ; Manufacturer Standard Lead Time. 12 Weeks ; Detailed Description. N-Channel 150 V 104A (Tc) 380W (Tc) Through Hole TO-220AB
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| Current | 3 A |
| Brand | ON SEMI. |
| Part Number | TIP32C |
| Transistor Type | PNP |
| Mounting Type | DIP |
| Voltage | 100V |
| Maximum Operating Frequency | 10-50 |
| Maximum Operating Temperature | -65 - 150 DegreeC |
| Maximum Power Dissipation | 40W |
| Pin Count | 3 |
The TIP32C is a silicon Epitaxial-base PNP power transistor in Jedec TO-220 plastic package. It is intented for use in medium power linear and switching applications. The complementary NPN type is TIP31C.
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2N6027 Programmable Unijunction Transistor
₹ 5.50/PieceGet Latest Price
Minimum Order Quantity: 2000 Piece
| Type | Programmable |
| Package Type | TO-92 |
| Collector Emitter Voltage | 40 V |
| Collector Current | 150 mA |
| Mounting Type | Through Hole |
| Part Number | 2N6027 |
The UTC 2N6027 is a programmable unijunction transistor, it uses UTC's advanced technology to provide customers with low forward voltage, low gate to anode leakage current, low offset voltage and high peak output voltage, etc. The UTC 2N6027 is suitable for timing, thyristor-trigger, oscillator and pulse circuits, etc.
Additional Information:
- Item Code: ME11116
- Delivery Time: READY STOCK
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| Current | 6A |
| Voltage | 60V |
| Brand | CDIL |
| Part Number | TPN2907A TO92 |
| Mounting Type | DIP |
| Maximum Operating Temperature | 65 DegreeC ~ 200 DegreeC |
| Maximum Power Dissipation | 1.25 W |
| Pin Count | 3 |
This CDIL PN2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 600 mA. ABSOLUTE MAXIUM RATINGS (TA=25°C, unless otherwise specified.) Power Dissipation SOT-89 PD 1000 (Note 3) mW TO-92 625 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Notes: 1.
Additional Information:
- Delivery Time: READY STOCK
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| Transistor Type | PNP |
| Current | 600MA |
| Brand | ON SEMI |
| Part Number | Mmbt2907Alt1G Sot23 |
| Mounting Type | SMD |
| Maximum Operating Frequency | 200MHz |
| Maximum Operating Temperature | -55 DegreeC ~ 150 DegreeC (TJ) |
| Maximum Power Dissipation | 60V |
| Pin Count | 3 |
onsemi MMBT2907ALT1G PNP Transistor, -600 mA, -60 V, 3-Pin SOT-23. RS Stock No.: 113-8676PBrand: onsemiManufacturers Part No.: MMBT2907ALT1G. brand-logo.
Additional Information:
- Delivery Time: READY STOCK SAME DAY DISP.
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| Brand | INFINEON |
| Part Number | IRF3205PBF TO220 |
| Transistor Type | NPN |
| Mounting Type | DIP |
| Current | 75A |
| Linear Derating Factor | 1.3. W/ DegreeC |
| Gate Charge (Qg) | 62A |
| Drain Source Resistance | 8M OHM |
| Human Interface Input | 100V |
| Item Code | ME11118 |
| Maximum Operating Frequency | 110mA |
| Maximum Operating Temperature | -55 DegreeC to 175 DegreeC |
| Maximum Power Dissipation | 150 W |
| Pin Count | 3 |
The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Additional Information:
- Delivery Time: READY STOCK
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| Brand | ST |
| Part Number | TIP122 TO220 |
| Mounting Type | DIP |
| Current | 5A |
| Voltage | 100V |
| Maximum Operating Frequency | 10kHz to 100kHz |
| Maximum Operating Temperature | + 150 C |
| Maximum Power Dissipation | 100W |
| Pin Count | 3 |
TIP122 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Additional Information:
- Item Code: ME111119
- Delivery Time: READY STOCK
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