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Mosfet Transistor

Our range of products include NCE4688 DUAL CHANNEL POWER MOSFET, IRFB18N50K Power Mosfet, SQP120N10-3m8-GE3 MOSFET 100V, 120A, Irfp4668pbf Mosfet Transistor 200V 130A 9.7mOhm, 20N65 MOSFET,DIP, NPN WXDH and NCE603S Power Mosfet SOP-8.

  • NCE4688 DUAL CHANNEL POWER MOSFET
  • NCE4688 DUAL CHANNEL POWER MOSFET
  • NCE4688 DUAL CHANNEL POWER MOSFET
  • NCE4688 DUAL CHANNEL POWER MOSFET
  • NCE4688 DUAL CHANNEL POWER MOSFET
  • NCE4688 DUAL CHANNEL POWER MOSFET
  • NCE4688 DUAL CHANNEL POWER MOSFET
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NCE4688 DUAL CHANNEL POWER MOSFET

₹ 40/PieceGet Latest Price

Minimum Order Quantity: 50 Piece

Product Brochure

Drain-Source Voltage (VDS)60V
Continuous Drain Current (ID)6.3A
PolarityN and P-Channel
Drain-Source On-Resistance (RDS(on))35 mΩ
Package TypeSOP-8
Total Gate Charge (Qg)45 nC
Gate Threshold TypeStandard Level
ConfigurationDual
Maximum Operating Junction Temperature150 °C

The NCE4688 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge . The complementaryMOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.General Features● N-ChannelVDS = 60V,ID =6.3ARDS(ON) < 30mΩ @ VGS=10V● P-ChannelVDS = -60V,ID = -6ARDS(ON) < 80mΩ @ VGS=-10V● High power and current handing capability● Lead free product is acquired● Surface mount package 

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  • Delivery Time: 10-12 WORKING DAYS
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  • IRFB18N50K  Power Mosfet
  • IRFB18N50K  Power Mosfet
  • IRFB18N50K  Power Mosfet
  • IRFB18N50K  Power Mosfet
  • IRFB18N50K  Power Mosfet
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IRFB18N50K Power Mosfet

₹ 150/PieceGet Latest Price

Minimum Order Quantity: 20 Piece

Product Brochure

PolarityN Channel
Drain Source Voltage500V
Drain Current17A
Package TypeTO-220
Gate Charge100 nC
RDS On2 mΩ
Drive Voltage5 V
Mounting TypeThrough Hole
Body DiodeNo

Manufacturer: IOR Product Category: MOSFETs . Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Packaging: Tube Brand: IOR Product Type: MOSFETs Series: IRFB

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  • Delivery Time: EX-STOCK
  • Packaging Details: BOX

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  • SQP120N10-3m8-GE3  MOSFET 100V, 120A
  • SQP120N10-3m8-GE3  MOSFET 100V, 120A
  • SQP120N10-3m8-GE3  MOSFET 100V, 120A
  • SQP120N10-3m8-GE3  MOSFET 100V, 120A
  • SQP120N10-3m8-GE3  MOSFET 100V, 120A
  • SQP120N10-3m8-GE3  MOSFET 100V, 120A
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SQP120N10-3m8-GE3 MOSFET 100V, 120A

₹ 150/PieceGet Latest Price

Minimum Order Quantity: 20 Piece

Product Brochure

Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)120A
PolarityN-Channel
Drain-Source On-Resistance (RDS(on))10 mΩ
Package TypeTO-220
Total Gate Charge (Qg)150 nC
Gate Threshold TypeStandard Level
ConfigurationSingle
Maximum Operating Junction Temperature175 °C

Part StatusObsoletePower Dissipation (Max)250W (Tc)FET TypeN-ChannelOperating Temperature-55°C ~ 175°C (TJ)TechnologyMOSFET (Metal Oxide)GradeAutomotiveDrain to Source Voltage (Vdss)100 VQualificationAEC-Q101Current - Continuous Drain (Id) @ 25°C120A (Tc)Mounting TypeThrough HoleDrive Voltage (Max Rds On, Min Rds On)10VSupplier Device PackageTO-220ABRds On (Max) @ Id, Vgs3.8mOhm @ 20A, 10VPackage / CaseTO-220-3Vgs(th) (Max) @ Id3.5V @ 250µABase Product NumberSQP120

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  • Delivery Time: EX-STOCK
  • Packaging Details: BOX

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Irfp4668pbf Mosfet Transistor 200V 130A 9.7mOhm

₹ 200/PieceGet Latest Price

Minimum Order Quantity: 10 Piece

Product Brochure

Channel TypeN Channel
Transistor TypeNPN
Current130 A
Voltage200 V
BrandInfineon
Part NumberIrfp4668pbf
Maximum Gate Source Voltage- 30 V, + 30 V
Mounting TypeThrough Hole
Maximum Drain Source Resistance9.7 mOhms
Maximum Operating Temperature+ 175 C
Forward Transconductance150 S
Maximum Power Dissipation520 W
Pin Count3
Gate Charge (Qg)161 nC

Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 130 A Rds On - Drain-Source Resistance: 9.7 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Qg - Gate Charge: 161 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 520 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 74 ns Forward Transconductance - Min: 150 S Height: 20.7 mm Length: 15.87 mm Product Type: MOSFET Rise Time: 105 ns

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  • Delivery Time: 10 WORKING DAYS
  • Packaging Details: BOX

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20N65 MOSFET,DIP, NPN WXDH

₹ 50/PieceGet Latest Price

Minimum Order Quantity: 20 Piece

Channel TypeN Channel
Transistor TypeNPN
BrandWXDH
Part Number20N65
Current25A
Voltage650 V
Mounting TypeTHROUGH HOLE
Maximum Operating Frequency+125C

DescriptionThese silicon N-channel enhanced vdmosfets are obtainedby the self-aligned planar technology which reduce theconduction loss,improve switching performance andenhance the avalanche energy.The package form isTO-220F. Which accords with the RoHS standard. 2 Features● Fast switching● Low on resistance(Rdson≤0.5Ω)● Low gate charge(Typ: 57.7nC)● Low reverse transfer capacitances(Typ: 167pF)● 100% single pulse avalanche energy test● 100% ΔVDS test3 Application● Used in various power switching circuit for systemminiaturization and higher efficiency. ● Power switch circuit of adaptor and charger

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  • Delivery Time: 10 WORKING DAYS
  • Packaging Details: BOX

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NCE603S Power Mosfet SOP-8

₹ 14/PieceGet Latest Price

Minimum Order Quantity: 100 Piece

Product Brochure

Voltage110-120 V
Transistor TypeNPN
Current5A
BrandNCE POWER
Part NumberNCE603S
Mounting TypeSMD
Maximum Operating Temperature+175
Maximum Power Dissipation2W
Pin Count8

Product Category Power Mosfet Package/Enclosure SOP-8 Continuous Drain Current Id 5A Rds On(Max)@Id,Vgs 26mΩ@10V Drain-source voltage Vds 60V Pd-power dissipation (Max) 2W Gate voltage Vgs 20V fet type N-Channel

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  • Delivery Time: 10 WORKING DAYS
  • Packaging Details: BOX

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  • 2SC3998  SANYO C3998 NPN TRANSISTOR
  • 2SC3998  SANYO C3998 NPN TRANSISTOR
  • 2SC3998  SANYO C3998 NPN TRANSISTOR
  • 2SC3998  SANYO C3998 NPN TRANSISTOR
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2SC3998 SANYO C3998 NPN TRANSISTOR

₹ 120/PieceGet Latest Price

Minimum Order Quantity: 50 Piece

Product Brochure

Part Number2SC3998
Voltage1.5KV
Mounting TypeDIP
Transistor PolarityNPN
BrandSANYO
Maximum Operating Frequency+150C
Pin Count3

Type of transistorNPN
Polarisationbipolar
Collector-emitter voltage1.5kV
Collector current25A
Power0.25kW
CaseSOT93
MountingSMD

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  • Delivery Time: 10-12 WORKING DAYS
  • Packaging Details: BOX

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  • DTA143EUBTL  Bipolar Transistors - Pre-Biased TRANSISTOR
  • DTA143EUBTL  Bipolar Transistors - Pre-Biased TRANSISTOR
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DTA143EUBTL Bipolar Transistors - Pre-Biased TRANSISTOR

₹ 4/PieceGet Latest Price

Minimum Order Quantity: 100 Piece

Product Brochure

Transistor TypePNP
Maximum Power Dissipation625 mW
BrandROHM Semiconductor
Current100 mA
Part NumberDTA143EUBTL
Maximum Operating Temperature+ 150 C
Mounting TypeSMD

Bipolar Transistors - Pre-Biased TRANSISTOR

Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - Pre-Biased RoHS: Details Configuration: Single Transistor Polarity: PNP Typical Input Resistor: 4.7 kOhms Typical Resistor Ratio: 1 Mounting Style: SMD/SMT Package/Case: UMT-3F-3 DC Collector/Base Gain hFE Min: 30 Maximum Operating Frequency: 250 MHz Collector- Emitter Voltage VCEO Max: - Continuous Collector Current: - 100 mA Peak DC Collector Current: - 100 mA Pd - Power Dissipation: 200 mW Maximum Operating Temperature: + 150 C Series: DTA143EUB Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: ROHM Semiconductor Emitter- Base Voltage VEBO: - Maximum DC Collector Current: - 100 mA Output Voltage: - 100 mV Product Type: BJTs - Bipolar Transistors - Pre-Biased


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  • Delivery Time: 10 WORKING DAYS
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Type of CapacitorsMulti Layer Capacitor
Part NumberC0805C105M8RACAUTO
Maximum Operating Temperature+ 125 C
BrandKEMET
Capacitance1 uF
Voltage10 VDC
Tolerance20 %
Mounting TypeSMD
Package/Case0805

Multilayer Ceramic Capacitors MLCC - SMD/SMT 10V 1uF X7R 0805 20% 

Manufacturer: KEMET Product Category: Multilayer Ceramic Capacitors MLCC - SMD/SMT RoHS: Details Capacitance: 1 uF Voltage Rating DC: 10 VDC Dielectric: X7R Tolerance: 20 % Case Code - in: 0805 Case Code - mm: 2012 Height: 0.9 mm Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 125 C Product: General Type MLCCs Termination Style: SMD/SMT Termination: Standard Qualification: AEC-Q200 Series: SMD Auto X7R Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: KEMET Capacitance - nF: 1000 nF Class: Class 2 Length: 2 mm Package/Case: 0805 (2012 metric) Product Type: Ceramic Capacitors

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  • Delivery Time: 10 WORKING DAYS
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Type of CapacitorsMulti Layer Capacitor
Part NumberGRM319R72A221KA01D
Maximum Operating Temperature+ 125 C
BrandMurata
Capacitance220 pF
Voltage100 VDC
Tolerance10%
Mounting TypeSMD
Package/Case1206

Multilayer Ceramic Capacitors MLCC - SMD/SMT 220 pF 100 VDC 10% 1206 X7R

Manufacturer: Murata Product Category: Multilayer Ceramic Capacitors MLCC - SMD/SMT RoHS: Details Capacitance: 220 pF Voltage Rating DC: 100 VDC Dielectric: X7R Tolerance: 10 % Case Code - in: 1206 Case Code - mm: 3216 Height: 0.85 mm Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 125 C Product: General Type MLCCs Termination Style: SMD/SMT Termination: Standard Series: GRM Packaging: Reel Brand: Murata Electronics Capacitance - nF: 0.22 nF Class: Class 2 Length: 3.2 mm Package/Case: 1206 (3216 metric) Product Type: Ceramic Capacitors

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  • Delivery Time: 10 WORKING DAYS
  • Packaging Details: BOX

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2SD209L High Voltage Fast-Switching NPN Power Transistor

₹ 75/PieceGet Latest Price

Minimum Order Quantity: 50 Piece

Product Brochure

Current12A
Transistor TypeNPN
Voltage400V
BrandWINSEMI SEMICONDUCTOR
Part Number2SD209L
Mounting TypeDIP
Maximum Operating Temperature150C
Pin Count3

Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.

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  • Delivery Time: 10-12 WORKING DAYS
  • Packaging Details: BOX

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BC548 Bipolar Transistors - BJT NPN 30V 100mA

₹ 1/PieceGet Latest Price

Minimum Order Quantity: 1000 Piece

Product Brochure

Voltage30 V
Maximum Power Dissipation500 mW
Transistor TypeNPN
Current100 mA
Brandonsemi
Part NumberBC548
Mounting TypeDIP
Maximum Operating Temperature+ 150 C
Pin Count3

Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: Through Hole Package/Case: TO-92-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 30 V Collector- Base Voltage VCBO: 30 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 250 mV Maximum DC Collector Current: 100 mA Pd - Power Dissipation: 500 mW Gain Bandwidth Product fT: 300 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Series: BC548 Packaging: Bulk Brand: onsemi / Fairchild Continuous Collector Current: 100 mA Height: 5.33 mm Length: 5.2 mm Product Type: BJTs - Bipolar Transistors

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  • Delivery Time: 10 WORKING DAYS
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  • TD430N22KOF  SCR Modules 2200V 800A
  • TD430N22KOF  SCR Modules 2200V 800A
  • TD430N22KOF  SCR Modules 2200V 800A
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TD430N22KOF SCR Modules 2200V 800A

₹ 1,000/PieceGet Latest Price

Minimum Order Quantity: 1 Piece

Product Brochure

ROHS CompliantYes
Part NumberTD430N22KOF
MakeInfineon
Current800 A
Usage/ApplicationELECTRICAL INDUSTRY
Packaging TypeTray

SCR Modules 2200V 800A

Manufacturer: Infineon Product Category: SCR Modules RoHS: Details Packaging: Tray Brand: Infineon Technologies Product Type: SCR Modules

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  • Delivery Time: 10 WORKING DAYS
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