Mosfet Transistor
| Drain-Source Voltage (VDS) | 100V |
| Channel Type | N Channel |
| Continuous Drain Current (ID) | 30A |
| Drain-to-Source Voltage (Vds) | 30V |
| Maximum Continuous Drain Current | 5A |
| Polarity | N-Channel |
| Drain-Source On-Resistance (RDS(on)) | 4 mΩ |
| Package Type | TO-220 |
| Brand | IOR |
| Part Number | IRF540N |
| Total Gate Charge (Qg) | 25 nC |
| Configuration | Single |
| Pin Count | 3 |
| Maximum Operating Junction Temperature | 175 °C |
Product Description
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High-performance IOR IRF540N MOSFET Transistor with N-Channel type, suitable for switching and amplification applications.
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Supports Drain-to-Source Voltage (Vds) of 30V and Maximum Continuous Drain Current of 5A, ensuring efficient power handling.
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Compact and reliable design, ideal for use in power supplies, motor drivers, and electronic circuit applications.
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IRFZ44N MOSFET Transistor
₹ 18/PieceGet Latest Price
| Channel Type | N Channel |
| Drain-to-Source Voltage (Vds) | 60V |
| Maximum Continuous Drain Current | 50A |
| Mounting Type | DIP |
| Part Number | IRFZ44N |
| Maximum Drain Source Resistance | 22 MILI OHM |
| Maximum Operating Temperature | 175 |
| Pin Count | 3 |
| IRFZ44N Product details |
|
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MBR20200 MOSFET ONSEMI
₹ 10/PieceGet Latest Price
| Average Current | 20 A |
| Repetitive Voltage | 200 V |
| Package Type | TO-220 |
| Forward Voltage Drop | 0.5 V |
| Mounting Type | Through Hole |
| Operating Temp | Up to 150 C |
| Brand | ON Semi |
The MBR20200CT is a dual high-voltage Schottky rectifier designed for high-efficiency power conversion, commonly used in switching power supplies and DC-DC converters. It features a 200V peak repetitive reverse voltage and a 20A average rectified forward current.
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NJW0302G MOSFET TRANSISTOR
₹ 120/PieceGet Latest Price
| Drain Source Voltage | 250v |
| Drain Current | 15A |
| Package Type | TO-3P-3L (Through Hole). |
The NJW0302Gis a high-power PNP bipolar junction transistor (BJT) from onsemi, primarily designed for high-fidelity audio amplifier output stages and general linear applications. It is known for its exceptional safe operating area (SOA) and gain linearity, making it a reliable choice for high-power electronics.
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IRFP260N MOSFET
₹ 20/PieceGet Latest Price
| Polarity | N Channel |
| Drain Source Voltage | 200 V |
| Drain Current | 50 A |
The IRFP260N is a high-performance, 5th generation N-Channel Power MOSFET from Infineon Technologies (formerly International Rectifier) capable of handling up to 200V and 50A. Housed in a TO-247 package, it offers low on-resistance (
), fast switching, and high power dissipation (
), making it ideal for high-power DC-DC converters, motor controls, and UPS systems.
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NJW0281G Mosfet Transistor
₹ 120/PieceGet Latest Price
| Drain Source Voltage | 250v |
The NJW0281G is a high-power NPN bipolar junction transistor (BJT) primarily designed for high-fidelity audio amplifier output stages. It is known for its exceptional safe operating area, gain linearity, and its role as half of a complementary pair with the NJW0302G PNP transistor.
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St P55nf06 Power Mosfet Transistor 50N06
₹ 20/PieceGet Latest Price
| Polarity | N Channel |
| Drain Source Voltage | 60 V |
| Drain Current | 55 A |
| Package Type | TO-220 |
| Gate Charge | 30 nC |
| Drive Voltage | 10 V |
| Mounting Type | Through Hole |
The 55N06 (often marked as STP55N06 or P55NF06) is an N-Channel Power MOSFET designed for high-current switching applications. It typically supports a breakdown voltage of 60V and a continuous drain current of 50A to 55A.
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Toshiba K2837 MOSFET
₹ 60/PieceGet Latest Price
| Drain-Source Voltage (Vdss) | 500 V. |
| Continuous Drain Current (Id | 20 A. |
| Drain Power Dissipation (Pd) | 150 W at a case temperature of 25°C. |
| Static Drain-Source On-Resistance (Rds(on)) | Typically 0.21 Ω. |
| Package Type | TO-3P or TO-3PN |
| Gate-Source Voltage (Vgs) | ±30 V. |
| Operating Junction Temperature (Tch | Up to 150°C |
The Toshiba K2837 (also known as 2SK2837) is a high-speed, high-current silicon N-channel MOSFET. It is specifically designed for industrial applications such as chopper regulators, DC-DC converters, and motor drive systems.
- Drain-Source Voltage (Vdss): 500 V.
- Continuous Drain Current (Id): 20 A.
- Drain Power Dissipation (Pd): 150 W at a case temperature of 25°C.
- Static Drain-Source On-Resistance (Rds(on)): Typically 0.21 Ω.
- Package Type: TO-3P or TO-3PN.
- Gate-Source Voltage (Vgs): ±30 V.
- Operating Junction Temperature (Tch): Up to 150°C.
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50JR22 TOSHIBA MOSFET
₹ 100/PieceGet Latest Price
| TYPE | N-Channel IGBT (Insulated Gate Bipolar Transistor) |
| VOLTAGE | 600V |
| CURRENT | 50A |
| PACKAGE | TO-247 AND TO-3P (Through-hole) |
| Switching | Fast switching, low turn-off time |
| Applications | High-power, high-speed switching, especially for current-resonant inverters |
The Toshiba 50JR22, more accurately named GT50JR22, is a high-performance silicon N-channel Insulated Gate Bipolar Transistor (IGBT) used for fast, high-power switching in applications like current-resonant inverters, combining MOSFET gate control with bipolar transistor power. Key specs include 600V, 50A capability, fast switching (turn-off ~0.33µs), low saturation voltage (1.55V typ.), and an integrated freewheeling diode (FWD), often in a TO-3P package.
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65N10 Mosfet Transistor
₹ 50/PieceGet Latest Price
| Polarity | N Channel |
| Drain Source Voltage | 100 V |
| Drain Current | 65 A |
| Package Type | TO-220 |
| Gate Charge | 10 nC |
| Drive Voltage | 4.5 V |
| Mounting Type | Through Hole |
The 65N10 is generally a 100V N-Channel MOSFET, often found in TO-220 or DPAK packages, designed for high-efficiency switching, DC-DC converters, and motor control. Typical specifications feature a drain-source voltage , a continuous drain current often around and low on-resistance.
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