Osri Enterprises

Drain-Source Voltage (VDS)	500V
Continuous Drain Current (ID)	20A
Polarity	N-Channel
Drain-Source On-Resistance (RDS(on))	17 mΩ
Package Type	TO-247
Total Gate Charge (Qg)	110 nC
Configuration	Single
Maximum Operating Junction Temperature	175 °C

The IRFP460 is a high-voltage (500V), 20A N-Channel power MOSFET in a TO-247 package, designed for high-efficiency, fast-switching applications like SMPS, DC-DC converters, and motor drives. It features low  (), high energy absorption, and is ideal for high-power industrial applications

Drain-Source Voltage (VDS)	650V
Continuous Drain Current (ID)	48 A
Polarity	N-Channel
Drain-Source On-Resistance (RDS(on))	4 mΩ
Package Type	TO-220F
Total Gate Charge (Qg)	45 nC
Gate Threshold Type	Standard Level
Configuration	Single
Maximum Operating Junction Temperature	175 °C

The JCS12N65F is a high-voltage N-channel enhancement-mode power MOSFET manufactured by Jilin Sino-Microelectronics. It is designed for efficient switching in power electronics, particularly in high-voltage and high-frequency environments.

Drain-Source Voltage (VDS)	75V
Continuous Drain Current (ID)	80A
Polarity	N-Channel
Drain-Source On-Resistance (RDS(on))	10 mΩ
Package Type	TO-220
Total Gate Charge (Qg)	80 nC
Maximum Operating Junction Temperature	150 °C

The 75N75 is an N-channel power MOSFET designed for high-efficiency, high-frequency switching, commonly used in telecom, computer, and DC-DC converter applications. It features a 75V, 80A capacity, low on-resistance of Omega , and low gate charge  to handle high-demand power applications

Part Number	KGF15N120KDA & BT15T120
Collector Emitter Voltage	1200 V
Collector Current	15A
Module Configuration	Single IGBT
IGBT Type	NPT
Package Type	TO-247
Mounting Type	Through Hole
Package/Case	TO-247
Application	UPS, SMPS, Air Conditioner, Welding, Drives, Solar Inverter
Operating Temp	Up to 150 DEGREE

The 15T120 is a high-voltage, 15-Ampere (A) Insulated Gate Bipolar Transistor (IGBT) with a 1,200V1 comma 200 V1,200V (VCEScap V sub cap C cap E cap S end-sub𝑉𝐶𝐸𝑆) rating, commonly used in industrial, high-power switching applications such as induction cooking, inverters, and motor drives. Often found in a TO-247 package, it provides efficient switching with low saturation voltage (VCE(sat)cap V sub cap C cap E open paren s a t close paren end-sub𝑉𝐶𝐸(𝑠𝑎𝑡)) and is designed for high-temperature stability. 

Drain-Source Voltage (VDS)	600V
Continuous Drain Current (ID)	8A
Polarity	N-Channel
Drain-Source On-Resistance (RDS(on))	4 mΩ
Package Type	TO-220F
Total Gate Charge (Qg)	25 nC
Configuration	Single
Maximum Operating Junction Temperature	175 °C

The 7N65 is a high-voltage N-channel enhancement mode power MOSFET commonly used for fast switching in power supplies and motor controllers. It typically handles a continuous drain current of 7A and a maximum drain-source voltage of 650V. 

Drain-Source Voltage (VDS)	1200V
Continuous Drain Current (ID)	25A
Configuration	Single
Package Type	TO-247
Maximum Operating Junction Temperature	175 °C

A 25T120 IGBT is a high-power, fast-switching Insulated Gate Bipolar Transistor rated around 25 Amps and 1200 Volts, known for efficiency in applications like welding, UPS, motor drives, and solar inverters, featuring Trench Field Stop technology for low saturation voltage (VCE(sat)) and switching losses, often with a co-packaged freewheeling diode. Common package types include TO-247 for robust power handling. 

Collector Emitter Voltage	150 V
Collector Current	600 mA
Part Number	2N5551
Transistor Type	Bipolar Junction Transistor (BJT)
Channel Type	NPN
DC Current Gain	200
Package/Case	TO-92
Maximum Collector-Emitter Voltage	200 V
Maximum Collector Current	500mA
Mounting Type	Through Hole

Transistor Type	TRANSISTOR
Channel Type	NPN
Mounting Type	Through Hole
Maximum Collector-Emitter Voltage	30 V
Maximum Collector Current	1A
Part Number	8050 TRANSISTOR

HIGH CURRENT APPLICATION. FEATUREComplementary to KTC8550.MAXIMUM RATING (Ta=25)TO-92DIMMILLIMETERSABCDFGHJKL4.70 MAX4.80 MAX3.70 MAX0.451.001.270.850.4514.00 0.500.55 MAX2.30D1 23BAJKGHFFLECEC MN0.45 MAXM1.00N1. EMITTER3. COLLECTOR2. BASE+_ELECTRICAL CHARACTERISTICS (Ta=25)CHARACTERISTICSYMBOLTEST CONDITIONMIN. TYP.MAX.UNITCollector Cut-off Current ICBOVCB=15V, IE=0- - 50 nACollector-Base Breakdown VoltageV(BR)CBOIC=0.5mA, IE=035--VCollector-Emitter Breakdown Voltage V(BR)CEOIC=1mA, IB=030- - VDC Current GainhFE(1) (Note)VCE=1V, IC=50mA100 - 300 hFE(2)VCE=1V, IC=350mA60 - - Collector-Emitter Saturation VoltageVCE(sat)IC=500mA, IB=20mA- - 0.5VBase-Emitter Voltage VBEVCE=1V, IC=500mA-- 1.2VTransition Frequency fTVCE=5V, IC=10mA-120- MHzCollector Output CapacitanceCobVCB=10V, f=1MHz, IE=0- 13-pFNote : hFE(1) Classification C : 100200, D : 150300 CHARACTERISTICSYMBOLRATING UNITCollector-Base VoltageVCBO35VCollector-Emitter VoltageVCEO30VEmitter-Base VoltageVEBO5VCollector CurrentIC800mAEmitter CurrentIE-800mACollector Power DissipationPC625mWJunction TemperatureTj150Storage Temperature RangeTstg-55150

Collector-Emitter Voltage	80 V
Transistor Type	TRANSISTOR
Channel Type	NPN
Maximum Collector Current	2A
Mounting Type	Through Hole
DC Current Gain (hFE)	100-200
Maximum Collector-Emitter Voltage	100 V
Part Number	BD 139, BD140
Package Type	TO-126

Complementary BD136, BD138, BD140ABSOLUTE MAXIMUM RATINGSDESCRIPTIONSYMBOLBD135BD137UNITCollector -Emitter VoltageVCEO4560VCollector -Emitter Voltage (RBE=1kΩΩ)VCER4560VCollector -Base VoltageVCBO4560VEmitter Base VoltageVEBO5.0VCollector Current IC1.5ACollector Peak Current ICM2.0ABase CurrentIB0.5APower Dissipation @ Ta=25ºCPD 1.25WDerate above 25ºC10mW/ºCPower Dissipation @ Tc=25ºCPD12.5WDerate above 25ºC100mW/ºCPower Dissipation @ Tc=70ºCPD8.0WOperating And Storage Junction Temperature RangeTj, Tstg- 55 to +150ºCTHERMAL CHARACTERISTICSJunction to Ambient in free airRth (j-a)ºC/WJunction to CaseRth (j-c)ºC/WELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)DESCRIPTIONSYMBOLTEST CONDITIONMAXUNITCollector Emitter Sustaining Voltage*VCEO (sus)IC=30mA, IB=0BD135VBD137VBD139VCollector Cut off CurrentICBOVCB=30V, IE=00.1μAVCB=30V, IE=0, Tc=125ºC10μAEmitter Cut off CurrentIEBOVEB=5V, IC=010μADC Current Gain*hFE IC=0.005A, VCE=2VIC=0.15A, VCE=2V250IC=0.5A, VCE=2V*Pulse test:- Pulse width=300μμs, duty cycle=2% 10010MIN456080BD13980100100254025BCEContinental Device India LimitedData SheetPage 1 of 4Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Transistor Type	Triacs
Channel Type	NPN
Mounting Type	Through Hole
Maximum Collector-Emitter Voltage	200 V
Maximum Collector Current	5A
Part Number	BT134

Type	NPN Transistor
Collector Current	16 A
Collector Emitter Voltage	140 V
Package Type	TO-3 (Rugged metal can)
Polarity	NPN
Application	Solar Inverter, Industrial Drive, Lighting, UPS, Power Supply, Inverter, SMPS, Motor Drive
Gain	40
Mounting Type	Through Hole

The CDIL 3773 (specifically the 2N3773) is a high-power NPN Bipolar Junction Transistor manufactured by Continental Device India Limited (CDIL). It is designed for heavy-duty industrial and commercial applications, particularly where high current and voltage handling are required.
Core Specifications 

• Transistor Type: NPN
• Case Style: TO-3 (Rugged metal can)
• Max Collector-Emitter Voltage (VCEOcap V sub cap C cap E cap O end-sub𝑉𝐶𝐸𝑂): 140V
• Max Collector Current (ICcap I sub cap C𝐼𝐶): 16A
• Power Dissipation (PDcap P sub cap D𝑃𝐷): 150W
• DC Current Gain (hFEh sub cap F cap E end-subℎ𝐹𝐸): Typically 15 to 60 (at IC=8Acap I sub cap C equals 8 cap A𝐼𝐶=8𝐴

Polarity	NPN
Collector Current	15 A
Collector Emitter Voltage	230 V
Type	Switching
Package Type	TO-264 or TO-3PL through-hole package.
Gain	150
Mounting Type	Through Hole
Series	2SC Series
RoHS Status	RoHS Compliant

The Toshiba 2SC5200 is a high-power NPN bipolar junction transistor specifically designed for high-fidelity (Hi-Fi) audio frequency amplifier output stages. It is widely recognized for its high breakdown voltage, large current capacity, and excellent linearity, making it a staple for professional audio equipment repairs and builds

Part Number	2SA1943
Polarity	PNP
Collector Emitter Voltage	230 V
Collector Current	15 A
Transistor Type	PNP
Package Type	TO-3PL (also referred to as TO-3P(L)) or TO-264 through-hole packages.
DC Current Gain	160
Gain	150
Package/Case	TO - 264
Type	Switching
Mounting Type	Through Hole
Series	2SA Series
Saturation Voltage (VCE(sat))	250 mV
RoHS Status	RoHS Compliant
Operating Temperature	-65°C to 200°C
Manufacturer	Toshiba

The Toshiba 2SA1943 is a high-power Silicon PNP triple-diffused bipolar junction transistor (BJT) primarily designed for high-fidelity audio power amplifiers. It is widely used in output stages for 100-W to 150-W amplifiers and is the complementary pair to the 2SC5200 NPN transistor. 

Type	PNP TRANSISTOR
Collector Emitter Voltage	1000 V
Collector Current	10 A
Gain	5 TO 23
Package Type	ISOWATT-218FX
Application	Inverter, Power Supply, Amplifier, Switching, General Purpose
Brand	STMicroelectronics

The STMicroelectronics MD1802FX is a high-voltage NPN power transistor specifically designed for use in the horizontal deflection stage of standard-definition and slim CRT displays. It is manufactured using diffused collector planar technology, which provides high efficiency and ruggedness for demanding power-switching applications. 

Type	Power Transistor
Collector Emitter Voltage	1500 V
Collector Current	10 A
Polarity	NPN
Package Type	ISOWATT218FX
Application	Power Control, Switching, Motor Control, SMPS, Amplifier, Audio
Mounting Type	Through Hole
Brand	STMicroelectronics
Gain	40

The MD1803DFX is a high-voltage NPN power transistor manufactured by STMicroelectronics, primarily designed for use in the horizontal deflection stage of standard-definition CRT displays. It features a diffused collector in planar technology with an enhanced high-voltage structure to provide improved silicon efficiency and stable performance across temperature variations

Part Number	J6810A
Type	BJT
Collector Emitter Voltage	750 V
Collector Current	10 A
Transistor Type	high-voltage, high-current NPN bipolar junction transistor (BJT)
Gain	60
Package Type	TO-3PF
Package/Case	TO-3PF or TO-3P
Application	Audio, Signal Processing, Power Supply, Switching, General Purpose, Driver, Inverter, Amplifier
Mounting Type	Through Hole
Operating Temperature	-65°C to 150°C
Brand	Texas Instruments
Manufacturer	Onsemi
Collector-Base Voltage	1500 V

The J6810A (also designated as FJAF6810A) is a high-voltage, high-current NPN bipolar junction power transistor. Primarily manufactured by Fairchild Semiconductor (now part of ON Semiconductor), it is specifically designed for horizontal deflection output in high-resolution color displays and monitors.

Type	transistor
Polarity	npn-pnp
Package Type	smd
Collector Emitter Voltage	20v to 300v
Collector Current	100 mA to 5 mA
Application	Level Shift, Load Switch, General Purpose, Signal Amplify, RF, Battery Powered, Audio, Switching, Logic Level, LED Driver
Mounting Type	SMD

SMD transistor sample books are portable, binder-style kits that organize a wide variety of surface-mount components, such as Bipolar Junction Transistors (BJTs) and MOSFETs, into labeled sleeves for easy prototyping and repair. These books typically use the standard SOT-23 package and are available in various configurations, often containing between 21 and 60 unique transistor types. 

Type	BJT
Collector Emitter Voltage	230 V
Collector Current	1 A
Gain	100 TO 320
Package Type	TO-220F
Application	General Purpose, Signal Processing, Amplifier, Switching, Audio, Low Noise
Mounting Type	Through Hole

The A1837 (full part number 2SA1837) is a high-performance PNP epitaxial silicon transistor primarily designed for audio power amplification and high-voltage switching applications. It is frequently used in high-fidelity (Hi-Fi) audio systems as a driver stage amplifier and is often paired with its NPN complementary transistor, the 2SC4793, for push-pull amplifier designs.

Type	high-frequency driver
Collector Emitter Voltage	250 V
Collector Current	8 A
Gain	60
Package Type	TO-220AB
Application	Audio, Switching, Amplifier, Driver
Mounting Type	Through Hole
Brand	ON Semiconductor

The onsemi MJE15033G is a high-voltage PNP bipolar power transistor primarily designed for use as a high-frequency driver in audio amplifiers. It features a robust 8A collector current and a 250V collector-emitter voltage rating, making it suitable for demanding power amplification and switching applications.

Collector Emitter Voltage	600 V
Collector Current	40 A
Configuration	IGBT MOSFET
Package Type	TO-247
Application	Motor Drive, UPS, Welding, Solar Inverter, Wind Power, Induction Heating, SMPS, Inverter
Gate Voltage	18 V
Brand	ON Semiconductor
Mounting Type	Through Hole

The 40N60 is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) typically rated for 600V and 40A. It is designed for high-power switching applications, combining the fast switching speeds of a MOSFET with the high current handling of a bipolar transistor.