- JCS4N65F MOSFET N-CHANNEL
- HCS 80R380S MOSFET
- HCS80R380R MOSFET THT
- IRF640N MOSFET
- 1815/1015 KEC TRANSISTOR
- 2n5401 TRANSISTOR FSC
- MPSA92 TRANSISTOR FSC
- C2229 Transistor FSC
- BC557 BC558 TRANSISTOR KEC
- Bt131 Triac Controller
- A1941 TOSHIBA PNP TRANSISTOR
- BCP56 BJT Transistor
- BC547/BC548 NPN Transistor
- A1273 PNP Transistor
- MJE15032G NPN TRANSISTOR
- MPSA42 TRANSISTOR FSC
- ULN2004AN TRANSISTOR IC 16-PIN
- MJF122G NPN silicon power Darlington transistor
- 60N60 60A IGBT
- ULN2003A SMD TRANSISTOR
- C5198 TOSHIBA BJT
- IGBT Modules
Transistors
JCS4N65F MOSFET N-CHANNEL
₹ 16/PieceGet Latest Price
| Voltage | 600V |
| DRAIN CURRENT | 4 A |
| Gate-Source Voltage | +- 30V |
| Power Dissipation | 30W |
| Power Dissipation | 650V |
APPLICATIONSHigh efficiency switch mode power suppliesElectronic lamp ballasts based on half bridgeLED power supplies
FEATURESLow gate charge Low Crss(typical 14pF ) Fast switching 100% avalanche tested Improved dv/dt capabilityRoHS prodUCT
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HCS 80R380S MOSFET
₹ 60/PieceGet Latest Price
| Drain-Source Voltage (VDS) | 800 |
| Continuous Drain Current (ID) | 13A |
| Polarity | N-Channel |
| Package Type | DIP |
- N-Channel MOSFET
- The model number HCS80R380S from Semihow refers to an 800V N-Channel Super Junction MOSFET, which is an electronic component used in applications like Switch Mode Power Supplies (SMPS) and LED lighting power. It features a very low RDS(on), built-in ESD protection, and is 100% avalanche tested.
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HCS80R380R MOSFET THT
₹ 65/PieceGet Latest Price
HCS80R380R 800V N-Channel Super Junction MOSFET. Its N channel MOSFET, which is used to SMPS UPS, Inverter etc. It has three terminal its mounting style is Through hole. There is extremely low switching loss. Its used in Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), Power Factor Correction (PFC), TV power & LED Lighting Power, AC to DC Converters.
Features:
- Very Low FOM (RDS(on) X Qg )
- Extremely low switching loss
- Excellent stability and uniformity
- 100% Avalanche Tested
- Built-in ESD Diode
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IRF640N MOSFET
₹ 25/PieceGet Latest Price
| Drain-Source Voltage (VDS) | 600V |
| Continuous Drain Current (ID) | 10A |
| Polarity | N-Channel |
| Drain-Source On-Resistance (RDS(on)) | 7 mΩ |
| Package Type | D2PAK (TO-263) |
| Total Gate Charge (Qg) | 45 nC |
| Configuration | Single |
| Maximum Operating Junction Temperature | 175 °C |
IRF640N MOSFET
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1815/1015 KEC TRANSISTOR
₹ 2/PieceGet Latest Price
| Transistor Type | PNP & NPN |
| Collector-Emitter Voltage | 60 V |
| Drain Current | 1 A |
| Transistor Polarity | NPN & PNP |
| Power Dissipation | 0.5 W |
| Package Type | SOT 23 |
| 1815 KECProduct details |
|
- Type: p-n-p
- Power Dissipation: 0.4watts
- High voltage and High current: Vceo = 50v and Ic = 150mA
- Low Noise: 1dB
- Case Material: molded plastic
- Collector power dissipation: 400mW
- DC current gain: 400
- Collector Emitter and Collector Base breakdown voltage: 50Vdc
- Base Emitter Saturation Voltage: 1.1Vdc
- Collector Emitter Saturation Voltage: 0.3Vdc
- Base Emitter voltage: 1.45Vdc
- Complementary to 2SC1815
- Operating Temperature and Storage Temperature: -55℃ to +150℃
Note: Complete technical details can be found in the A1015 Datasheet linked
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2n5401 TRANSISTOR FSC
₹ 2/PieceGet Latest Price
| Transistor Type | TRANSISTOR |
| Channel Type | NPN |
| Mounting Type | Through Hole |
| Maximum Collector-Emitter Voltage | 200 V |
| Maximum Collector Current | 500mA |
| Part Number | 2N5401 |
2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage 2N5400 2N5401 -VCBO130 160 V Collector Emitter Voltage 2N5400 2N5401 -VCEO120 150 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 600 mA Power Dissipation Ptot 625 mW Junction Temperature Tj 150 OC Storage Temperature Range Tstg- 55 to + 150 OC 1. Emitter 2. Base 3. Collector TO-92 Plastic Package
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MPSA92 TRANSISTOR FSC
₹ 1.50/PieceGet Latest Price
| Transistor Type | TRANSISTOR |
| Channel Type | NPN |
| Mounting Type | Through Hole |
| Maximum Collector-Emitter Voltage | 200 V |
| Maximum Collector Current | 500mA |
| Part Number | MPSA92 |
High voltage MPSA92 transistor can switch up to 300V of loads with an extremely less trigger voltage like 5V. So due to this feature, this transistor is used in digital electronics because it operates with 5V. Generally, a transistor is used like an amplifier or a switch but this transistor is used only for switching due to less gain value.
- This is a PNP type transistor with high voltage
- The voltage from collector terminal to emitter or VCE is 300 V
- The voltage from collector to base terminal or VCB is 300V
- The voltage from emitter to base or VBE is 5V
- Collector current (IC) is 500mA
- Typical DC gain or hFE is 40 whenever IC=10mA
- Transition Frequency is 50MHz
- The available package is To-92
- Max collector current (IC) ranges from 200mA to 500mA
- Collector to emitter voltage (MAX) or VCE is 300V
- Collector to base voltage (MAX) or VCB is 300V
- Emitter to base voltage (Max) is 5V
- Collector dissipation (Max) or Pc is 625 mW
- Transition frequency (Max) or fT is 50 MHz
- Max and min DC Current Gain or hFE ranges from 25 to 40
- Maximum operating temperature ranges from -55 to +150 C
Equivalent NPN MPSA92 transistor is MPSA42. Equivalent PNP MPSA92 transistors are NTE288, MPSA43, KST92 (SMD), 2SC3468 & 2SA1371 and Other PNP transistors are BD136, 2N6107, SA1943, etc. SMD versions of MPSA92 PNP transistor are; MMBTA92 (SOT-23), KST92 (SOT-23) & PZTA92 (SOT-223).
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C2229 Transistor FSC
₹ 2.50/PieceGet Latest Price
| Transistor Type | TRANSISTOR |
| Channel Type | NPN |
| Mounting Type | Through Hole |
| Maximum Collector-Emitter Voltage | 200 V |
| Maximum Collector Current | 100mA |
| Part Number | C2229 |
| C2229 Product details |
|
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BC557 BC558 TRANSISTOR KEC
₹ 1/PieceGet Latest Price
| Transistor Type | TRANSISTOR |
| Collector-Emitter Voltage | 60 V |
| Drain Current | 1 A |
| Package Type | TO 92 |
| Transistor Polarity | NPN |
| Power Dissipation | 0.5 W |
| BC557 Product details |
|
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Bt131 Triac Controller
₹ 3/PieceGet Latest Price
| On-State Current | 16A |
| Mounting Type | Through Hole |
| Rated On-State Current | 1A |
| On-State Voltage | 1.5V |
| Brand | NEXPERIA |
GENERAL DESCRIPTIONQUICK REFERENCE DATAGlass passivated, sensitive gateSYMBOLPARAMETERMAX. MAX. UNITtriacs in a plastic envelope, intendedforuseingeneralpurposeBT131-500600bidirectional switching and phaseVDRMRepetitive peak off-state voltages500600Vcontrol applications. These devicesIT(RMS)RMS on-state current11Aare intended to be interfaced directlyITSMNon-repetitive peak on-state current1616Ato microcontrollers, logic integratedcircuits and other low power gatetrigger circuits
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A1941 TOSHIBA PNP TRANSISTOR
₹ 50/PieceGet Latest Price
| Type | PNP TRANSISTOR |
| Collector Emitter Voltage | 140 A |
| Collector Current | 10 A |
| Gain | 100 |
| Package Type | TO-3P |
| Application | Switching, Signal Processing, Power Supply, Low Noise, Audio, General Purpose, Amplifier |
| Mounting Type | Through Hole |
| Frequency | 50 MHz |
| Brand | Toshiba |
The Toshiba A1941 (full part number 2SA1941) is a silicon PNP Triple Diffused Type power transistor designed primarily for high-power audio amplification. It is most commonly used in the output stages of 70-watt high-fidelity audio amplifiers.
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BCP56 BJT Transistor
₹ 2.50/PieceGet Latest Price
| Type | BJT |
| Collector Current | 1 A |
| Collector Emitter Voltage | 80 V |
| Package Type | SOT-223 |
| Polarity | NPN |
| Application | SMPS, Motor Drive, Welding, Power Supply, Inverter, Lighting, Solar Inverter, Industrial Drive, UPS |
| Mounting Type | SMD |
The BCP56 is an 80 V, 1 A NPN medium-power bipolar junction transistor (BJT) commonly used in general-purpose switching, automotive post-voltage regulation, and audio amplifier output circuits. It is housed in a surface-mount SOT-223 plastic package.
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| Part Number | BC547 |
| Collector Emitter Voltage | 60 V |
| Collector Current | 100 mA |
| Transistor Type | NPN |
| Package/Case | TO-92 |
| Transistor Polarity | NPN |
| Power Dissipation | 500 mW |
| Operating Temperature | -65°C to 150°C |
Features:
- High Voltage: BC546 VCEO=65V.
- For Complementary With PNP Type BC556/557/558.
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A1273 PNP Transistor
₹ 5/PieceGet Latest Price
| Type | Switching |
| Collector Emitter Voltage | 50 V |
| Collector Current | 2 A |
| Gain | 120 |
| Package Type | TO-92L |
| Application | Signal Processing, Switching, Audio, Amplifier |
| Mounting Type | Through Hole |
| Operating Temperature | -55 to 150°C |
The term A1273 primarily refers to a 2SA1273 PNP bipolar junction transistor used in electronic signal amplification and switching. It is also the model number for the 2008 13-inch Apple MacBook Air.
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MJE15032G NPN TRANSISTOR
₹ 70/PieceGet Latest Price
| Type | high-frequency driver |
| Collector Emitter Voltage | 250 VDC |
| Collector Current | 8 A |
| Gain | 60 |
| Package Type | TO-220AB |
| Application | Amplifier, Audio, Switching, Driver, Signal Processing |
| Mounting Type | Through Hole |
| Brand | ON Semiconductor |
The onsemi MJE15032G is a high-voltage NPN silicon plastic power transistor specifically designed for use as a high-frequency driver in audio amplifier applications. It is a complementary device to the MJE15033G PNP transistor.
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MPSA42 TRANSISTOR FSC
₹ 1.50/PieceGet Latest Price
| Transistor Type | Bipolar transistor |
| Channel Type | NPN |
| Mounting Type | Through Hole |
| Maximum Collector-Emitter Voltage | 200 V |
| Maximum Collector Current | 500mA |
| Part Number | mpsa42 |
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 500 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 300 V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA, 10V | |
| Power - Max | 625 mW | |
| Frequency - Transition | 50MHz | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole |
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ULN2004AN TRANSISTOR IC 16-PIN
₹ 22/PieceGet Latest Price
| Polarity | NPN Darlington |
| Collector Emitter Voltage | 50V MAX |
| Collector Current | 500 mA |
| Package Type | PDIP |
| Application | Lamp Driver, Power Switch, Line Driver, Motor Driver, Audio Output, Relay Driver, SMPS, Inverter, Solenoid Driver |
| Mounting Type | Through Hole |
| Brand | STMicroelectronics |
The ULN2004 is a high-voltage, high-current Darlington transistor array containing seven NPN Darlington pairs. It is specifically designed to interface 6V to 15V CMOS or PMOS logic families with higher-power loads like relays, solenoids, and stepper motors.
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MJF122G NPN silicon power Darlington transistor
₹ 30/PieceGet Latest Price
| Polarity | NPN Darlington |
| Collector Emitter Voltage | 100 V |
| Collector Current | 8 A |
| Gain | 1000 |
| Package Type | TO-220 |
| Type | Switching |
| Application | Relay Driver, General Purpose, Power Switch, Motor Driver, Solenoid Driver, Audio Output |
| Mounting Type | Through Hole |
| Brand | ON Semiconductor |
The MJF122G is a complementary NPN silicon power Darlington transistor manufactured by onsemi. It is designed for general-purpose amplifier and low-speed switching applications where an electrically isolated mounting surface is required.
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60N60 60A IGBT
₹ 140/PieceGet Latest Price
| Part Number | 60N60 |
| Collector Emitter Voltage | 600 V |
| Collector Current | 60 A |
| IGBT Type | IGBT |
| Mounting Type | Through Hole |
| Package/Case | TO-247-3 |
| Input Type | Standard |
| Operating Temperature | -55°C to 175°C |
| Low Saturation Voltage | Typically 1.9V |
The 60N60 is a high-power Insulated-Gate Bipolar Transistor (IGBT) widely used in high-voltage, high-speed switching applications. It is most commonly utilized in solar inverters, welding machines, uninterruptible power supplies (UPS), and electric motor drives.
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ULN2003A SMD TRANSISTOR
₹ 10/PieceGet Latest Price
| Polarity | NPN |
| Collector Emitter Voltage | 50 V |
| Collector Current | 500 mA |
| Type | Darlington |
| Package Type | SOP-16 |
| Gain | 100 |
| Application | Battery Powered, Signal Amplify, Load Switch, Logic Level, Audio, LED Driver, Level Shift, General Purpose, Switching |
| Brand | Microchip |
| Mounting Type | SMD |
The ULN2003 is a high-voltage, high-current integrated circuit (IC) containing seven NPN Darlington transistor pairs. The surface-mount device (SMD) version typically comes in an SOIC-16 or SOP-16 package and is designed to interface low-power logic circuits with high-power loads like relays and motors.
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C5198 TOSHIBA BJT
₹ 50/PieceGet Latest Price
| Part Number | C5198 |
| Collector Emitter Voltage | 140 V |
| Collector Current | 10 A |
| Transistor Type | NPN |
| DC Current Gain | 100 |
| Package/Case | TO-3P-3 |
| Operating Temperature | -65°C to 200°C |
| Manufacturer | Toshiba |
| Collector Power Dissipation ( | 100 W |
The Toshiba 2SC5198 (C5198) is a high-power NPN silicon epitaxial triple-diffused bipolar junction transistor (BJT) designed for audio frequency power amplifiers. It features a 140V collector-emitter voltage (), 10A collector current (), and 100W power dissipation, typically in a TO-3P package.
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