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Transistors

Pioneers in the industry, we offer JCS4N65F MOSFET N-CHANNEL, HCS 80R380S MOSFET, HCS80R380R MOSFET THT, IRF640N MOSFET, 1815/1015 KEC TRANSISTOR and 2n5401 TRANSISTOR FSC from India.

  • JCS4N65F MOSFET N-CHANNEL
  • JCS4N65F MOSFET N-CHANNEL
  • JCS4N65F MOSFET N-CHANNEL
  • JCS4N65F MOSFET N-CHANNEL
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JCS4N65F MOSFET N-CHANNEL

₹ 16/PieceGet Latest Price

Voltage600V
DRAIN CURRENT4 A
Gate-Source Voltage+- 30V
Power Dissipation30W
Power Dissipation650V

APPLICATIONSHigh efficiency switch mode power suppliesElectronic lamp ballasts based on half bridgeLED power supplies

FEATURESLow gate charge Low Crss(typical 14pF ) Fast switching 100% avalanche tested Improved dv/dt capabilityRoHS prodUCT

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  • HCS 80R380S MOSFET
  • HCS 80R380S MOSFET
  • HCS 80R380S MOSFET
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HCS 80R380S MOSFET

₹ 60/PieceGet Latest Price

Drain-Source Voltage (VDS)800
Continuous Drain Current (ID)13A
PolarityN-Channel
Package TypeDIP

  • N-Channel MOSFET
    • The model number HCS80R380S from Semihow refers to an 800V N-Channel Super Junction MOSFET, which is an electronic component used in applications like Switch Mode Power Supplies (SMPS) and LED lighting power. It features a very low RDS(on), built-in ESD protection, and is 100% avalanche tested.

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  • HCS80R380R MOSFET THT
  • HCS80R380R MOSFET THT
  • HCS80R380R MOSFET THT
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HCS80R380R MOSFET THT

₹ 65/PieceGet Latest Price

HCS80R380R 800V N-Channel Super Junction MOSFET. Its N channel MOSFET, which is used to SMPS UPS, Inverter etc. It has three terminal its mounting style is Through hole. There is extremely low switching loss. Its used in Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), Power Factor Correction (PFC), TV power & LED Lighting Power, AC to DC Converters.

Features:

  • Very Low FOM (RDS(on) X Qg )
  • Extremely low switching loss
  • Excellent stability and uniformity
  • 100% Avalanche Tested
  • Built-in ESD Diode

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  • IRF640N MOSFET
  • IRF640N MOSFET
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IRF640N MOSFET

₹ 25/PieceGet Latest Price

Drain-Source Voltage (VDS)600V
Continuous Drain Current (ID)10A
PolarityN-Channel
Drain-Source On-Resistance (RDS(on))7 mΩ
Package TypeD2PAK (TO-263)
Total Gate Charge (Qg)45 nC
ConfigurationSingle
Maximum Operating Junction Temperature175 °C

IRF640N MOSFET

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  • 1815/1015 KEC TRANSISTOR
  • 1815/1015 KEC TRANSISTOR
  • 1815/1015 KEC TRANSISTOR
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1815/1015 KEC TRANSISTOR

₹ 2/PieceGet Latest Price

Transistor TypePNP & NPN
Collector-Emitter Voltage60 V
Drain Current1 A
Transistor PolarityNPN & PNP
Power Dissipation0.5 W
Package TypeSOT 23

1815 KECProduct details

DESCRIPTION
NPN transistor in a TO-92 (SOT54) plastic package. PNP complement: 2PA1015.

FEATURES
• Low current (max. 150 mA)
• Low voltage (max. 50 V).

APPLICATIONS
• General purpose switching and amplification, e.g. audio amplifier driver stages.

 1015 KEC Features and Technical Specifications
  • Type: p-n-p
  • Power Dissipation: 0.4watts
  • High voltage and High current: Vceo = 50v and Ic = 150mA
  • Low Noise: 1dB
  • Case Material: molded plastic
  • Collector power dissipation: 400mW
  • DC current gain: 400
  • Collector Emitter and Collector Base breakdown voltage: 50Vdc
  • Base Emitter Saturation Voltage: 1.1Vdc
  • Collector Emitter Saturation Voltage: 0.3Vdc
  • Base Emitter voltage: 1.45Vdc
  • Complementary to 2SC1815
  • Operating Temperature and Storage Temperature: -55℃ to +150℃

 

Note: Complete technical details can be found in the A1015 Datasheet linked

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  • 2n5401 TRANSISTOR FSC
  • 2n5401 TRANSISTOR FSC
  • 2n5401 TRANSISTOR FSC
  • 2n5401 TRANSISTOR FSC
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2n5401 TRANSISTOR FSC

₹ 2/PieceGet Latest Price

Transistor TypeTRANSISTOR
Channel TypeNPN
Mounting TypeThrough Hole
Maximum Collector-Emitter Voltage200 V
Maximum Collector Current500mA
Part Number2N5401

2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage 2N5400 2N5401 -VCBO130 160 V Collector Emitter Voltage 2N5400 2N5401 -VCEO120 150 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 600 mA Power Dissipation Ptot 625 mW Junction Temperature Tj 150 OC Storage Temperature Range Tstg- 55 to + 150 OC 1. Emitter 2. Base 3. Collector TO-92 Plastic Package

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  • MPSA92 TRANSISTOR FSC
  • MPSA92 TRANSISTOR FSC
  • MPSA92 TRANSISTOR FSC
  • MPSA92 TRANSISTOR FSC
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MPSA92 TRANSISTOR FSC

₹ 1.50/PieceGet Latest Price

Transistor TypeTRANSISTOR
Channel TypeNPN
Mounting TypeThrough Hole
Maximum Collector-Emitter Voltage200 V
Maximum Collector Current500mA
Part NumberMPSA92

High voltage MPSA92 transistor can switch up to 300V of loads with an extremely less trigger voltage like 5V. So due to this feature, this transistor is used in digital electronics because it operates with 5V. Generally, a transistor is used like an amplifier or a switch but this transistor is used only for switching due to less gain value.
  • This is a PNP type transistor with high voltage
  • The voltage from collector terminal to emitter or VCE is 300 V
  • The voltage from collector to base terminal or VCB is 300V
  • The voltage from emitter to base or VBE is 5V
  • Collector current (IC) is 500mA
  • Typical DC gain or hFE is 40 whenever IC=10mA
  • Transition Frequency is 50MHz
  • The available package is To-92
  • Max collector current (IC) ranges from 200mA to 500mA
  • Collector to emitter voltage (MAX) or VCE is 300V
  • Collector to base voltage (MAX) or VCB is 300V
  • Emitter to base voltage (Max) is 5V
  • Collector dissipation (Max) or Pc is 625 mW
  • Transition frequency (Max) or fT is 50 MHz
  • Max and min DC Current Gain or hFE ranges from 25 to 40
  • Maximum operating temperature ranges from -55 to +150 C

Equivalent NPN MPSA92 transistor is MPSA42. Equivalent PNP MPSA92 transistors are NTE288, MPSA43, KST92 (SMD), 2SC3468 & 2SA1371 and Other PNP transistors are BD136, 2N6107, SA1943, etc. SMD versions of MPSA92 PNP transistor are; MMBTA92 (SOT-23), KST92 (SOT-23) & PZTA92 (SOT-223).

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  • C2229 Transistor FSC
  • C2229 Transistor FSC
  • C2229 Transistor FSC
  • C2229 Transistor FSC
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C2229 Transistor FSC

₹ 2.50/PieceGet Latest Price

Transistor TypeTRANSISTOR
Channel TypeNPN
Mounting TypeThrough Hole
Maximum Collector-Emitter Voltage200 V
Maximum Collector Current100mA
Part NumberC2229

C2229 Product details

Black and White TV Video Output Applications
High-Voltage Switching Applications
Driver Stage Audio Amplifier Applications

•  High breakdown voltage: VCEO= 150 V (min)
•  Low output capacitance: Cob= 5.0 pF (max)
•  High transition frequency: fT= 120 MHz (typ.)

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  • BC557 BC558 TRANSISTOR KEC
  • BC557 BC558 TRANSISTOR KEC
  • BC557 BC558 TRANSISTOR KEC
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BC557 BC558 TRANSISTOR KEC

₹ 1/PieceGet Latest Price

Transistor TypeTRANSISTOR
Collector-Emitter Voltage60 V
Drain Current1 A
Package TypeTO 92
Transistor PolarityNPN
Power Dissipation0.5 W

BC557 Product details

GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .

FEATURES
• For Complementary With NPN Type BC546/547/548.

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  • Bt131 Triac Controller
  • Bt131 Triac Controller
  • Bt131 Triac Controller
  • Bt131 Triac Controller
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Bt131 Triac Controller

₹ 3/PieceGet Latest Price

On-State Current16A
Mounting TypeThrough Hole
Rated On-State Current1A
On-State Voltage1.5V
BrandNEXPERIA

GENERAL DESCRIPTIONQUICK REFERENCE DATAGlass passivated, sensitive gateSYMBOLPARAMETERMAX. MAX. UNITtriacs in a plastic envelope, intendedforuseingeneralpurposeBT131-500600bidirectional switching and phaseVDRMRepetitive peak off-state voltages500600Vcontrol applications. These devicesIT(RMS)RMS on-state current11Aare intended to be interfaced directlyITSMNon-repetitive peak on-state current1616Ato microcontrollers, logic integratedcircuits and other low power gatetrigger circuits

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  • A1941 TOSHIBA PNP TRANSISTOR
  • A1941 TOSHIBA PNP TRANSISTOR
  • A1941 TOSHIBA PNP TRANSISTOR
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A1941 TOSHIBA PNP TRANSISTOR

₹ 50/PieceGet Latest Price

TypePNP TRANSISTOR
Collector Emitter Voltage140 A
Collector Current10 A
Gain100
Package TypeTO-3P
ApplicationSwitching, Signal Processing, Power Supply, Low Noise, Audio, General Purpose, Amplifier
Mounting TypeThrough Hole
Frequency50 MHz
BrandToshiba

The Toshiba A1941 (full part number 2SA1941) is a silicon PNP Triple Diffused Type power transistor designed primarily for high-power audio amplification. It is most commonly used in the output stages of 70-watt high-fidelity audio amplifiers. 

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  • BCP56 BJT Transistor
  • BCP56 BJT Transistor
  • BCP56 BJT Transistor
  • BCP56 BJT Transistor
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BCP56 BJT Transistor

₹ 2.50/PieceGet Latest Price

TypeBJT
Collector Current1 A
Collector Emitter Voltage80 V
Package TypeSOT-223
PolarityNPN
ApplicationSMPS, Motor Drive, Welding, Power Supply, Inverter, Lighting, Solar Inverter, Industrial Drive, UPS
Mounting TypeSMD

The BCP56 is an 80 V, 1 A NPN medium-power bipolar junction transistor (BJT) commonly used in general-purpose switching, automotive post-voltage regulation, and audio amplifier output circuits. It is housed in a surface-mount SOT-223 plastic package.

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  • BC547/BC548 NPN Transistor
  • BC547/BC548 NPN Transistor
  • BC547/BC548 NPN Transistor
  • BC547/BC548 NPN Transistor
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Part NumberBC547
Collector Emitter Voltage60 V
Collector Current100 mA
Transistor TypeNPN
Package/CaseTO-92
Transistor PolarityNPN
Power Dissipation500 mW
Operating Temperature-65°C to 150°C

Features:
  • High Voltage: BC546 VCEO=65V.
  • For Complementary With PNP Type BC556/557/558.

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  • A1273 PNP Transistor
  • A1273 PNP Transistor
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A1273 PNP Transistor

₹ 5/PieceGet Latest Price

TypeSwitching
Collector Emitter Voltage50 V
Collector Current2 A
Gain120
Package TypeTO-92L
ApplicationSignal Processing, Switching, Audio, Amplifier
Mounting TypeThrough Hole
Operating Temperature-55 to 150°C

The term A1273 primarily refers to a 2SA1273 PNP bipolar junction transistor used in electronic signal amplification and switching. It is also the model number for the 2008 13-inch Apple MacBook Air.

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  • MJE15032G NPN TRANSISTOR
  • MJE15032G NPN TRANSISTOR
  • MJE15032G NPN TRANSISTOR
  • MJE15032G NPN TRANSISTOR
  • MJE15032G NPN TRANSISTOR
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MJE15032G NPN TRANSISTOR

₹ 70/PieceGet Latest Price

Typehigh-frequency driver
Collector Emitter Voltage250 VDC
Collector Current8 A
Gain60
Package TypeTO-220AB
ApplicationAmplifier, Audio, Switching, Driver, Signal Processing
Mounting TypeThrough Hole
BrandON Semiconductor

The onsemi MJE15032G is a high-voltage NPN silicon plastic power transistor specifically designed for use as a high-frequency driver in audio amplifier applications. It is a complementary device to the MJE15033G PNP transistor.

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  • MPSA42 TRANSISTOR FSC
  • MPSA42 TRANSISTOR FSC
  • MPSA42 TRANSISTOR FSC
  • MPSA42 TRANSISTOR FSC
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MPSA42 TRANSISTOR FSC

₹ 1.50/PieceGet Latest Price

Transistor TypeBipolar transistor
Channel TypeNPN
Mounting TypeThrough Hole
Maximum Collector-Emitter Voltage200 V
Maximum Collector Current500mA
Part Numbermpsa42

Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V
Power - Max 625 mW
Frequency - Transition 50MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole

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  • ULN2004AN TRANSISTOR IC 16-PIN
  • ULN2004AN TRANSISTOR IC 16-PIN
  • ULN2004AN TRANSISTOR IC 16-PIN
  • ULN2004AN TRANSISTOR IC 16-PIN
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ULN2004AN TRANSISTOR IC 16-PIN

₹ 22/PieceGet Latest Price

PolarityNPN Darlington
Collector Emitter Voltage50V MAX
Collector Current500 mA
Package TypePDIP
ApplicationLamp Driver, Power Switch, Line Driver, Motor Driver, Audio Output, Relay Driver, SMPS, Inverter, Solenoid Driver
Mounting TypeThrough Hole
BrandSTMicroelectronics

The ULN2004 is a high-voltage, high-current Darlington transistor array containing seven NPN Darlington pairs. It is specifically designed to interface 6V to 15V CMOS or PMOS logic families with higher-power loads like relays, solenoids, and stepper motors. 

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PolarityNPN Darlington
Collector Emitter Voltage100 V
Collector Current8 A
Gain1000
Package TypeTO-220
TypeSwitching
ApplicationRelay Driver, General Purpose, Power Switch, Motor Driver, Solenoid Driver, Audio Output
Mounting TypeThrough Hole
BrandON Semiconductor

The MJF122G is a complementary NPN silicon power Darlington transistor manufactured by onsemi. It is designed for general-purpose amplifier and low-speed switching applications where an electrically isolated mounting surface is required.

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60N60 60A IGBT

₹ 140/PieceGet Latest Price

Part Number60N60
Collector Emitter Voltage600 V
Collector Current60 A
IGBT TypeIGBT
Mounting TypeThrough Hole
Package/CaseTO-247-3
Input TypeStandard
Operating Temperature-55°C to 175°C
Low Saturation VoltageTypically 1.9V

The 60N60 is a high-power Insulated-Gate Bipolar Transistor (IGBT) widely used in high-voltage, high-speed switching applications. It is most commonly utilized in solar inverters, welding machines, uninterruptible power supplies (UPS), and electric motor drives.

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ULN2003A SMD TRANSISTOR

₹ 10/PieceGet Latest Price

PolarityNPN
Collector Emitter Voltage50 V
Collector Current500 mA
TypeDarlington
Package TypeSOP-16
Gain100
ApplicationBattery Powered, Signal Amplify, Load Switch, Logic Level, Audio, LED Driver, Level Shift, General Purpose, Switching
BrandMicrochip
Mounting TypeSMD

The ULN2003 is a high-voltage, high-current integrated circuit (IC) containing seven NPN Darlington transistor pairs. The surface-mount device (SMD) version typically comes in an SOIC-16 or SOP-16 package and is designed to interface low-power logic circuits with high-power loads like relays and motors.

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C5198 TOSHIBA BJT

₹ 50/PieceGet Latest Price

Part NumberC5198
Collector Emitter Voltage140 V
Collector Current10 A
Transistor TypeNPN
DC Current Gain100
Package/CaseTO-3P-3
Operating Temperature-65°C to 200°C
ManufacturerToshiba
Collector Power Dissipation (100 W

The Toshiba 2SC5198 (C5198) is a high-power NPN silicon epitaxial triple-diffused bipolar junction transistor (BJT) designed for audio frequency power amplifiers. It features a 140V collector-emitter voltage (), 10A collector current (), and 100W power dissipation, typically in a TO-3P package.

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