X
View Mobile Number 92% Response Rate

Our Products

+View All

3D Printing Materials

Our range of products include 3D Printing Materials, Suspended Monolayer Graphene On Tem Grids (Quantifoil Gold), Hydrophilic Platinum Nanoparticles, Molybdenum Disulfide (Mos2) Pristine Flakes In Solution, 100, Gfet-S20 For Sensing Applications and Gfet-S12 For Sensing Applications 1.

3D Printing Materials
Interested in this product?
Get Best Quote

3D Printing Materials

Rs 999 / pairGet Latest Price

i. Conductive Flexible TPU Filament 100g

ii. Conductive Graphene Filament

iii. Ferro-Magnetic PLA

iv. Scorpion (Flexible) Nylon - 1.75 mm, 400 gram

v. Scorpion (Flexible) Nylon - 3.00 mm, 400 gram

Description: Conductive Graphene Filament, a material by Graphene 3D Lab, is specifically designed to allow you to 3D print electrically conductive components using almost any commercially available desktop 3D printer

Properties:

Diameter : 1.75 mm (±0.1 mm)

Weight: 100 grams

Volume Resistivity: <1.25 Ω-cm

Color: Black (Matte finish)

Base Resin: Thermoplastic Polyurethane (TPU)

Hardness: Shore 90 A

Reel diameter: 20 cm (7.87 in)

Reel width: 5.5 cm (2.16 in)

Hub diameter: 5.2 cm (2.04 in)

Improved UV stability ( suitable for outdoor use)

View Complete Details

Yes, I am interested!

Suspended Monolayer Graphene On Tem Grids (Quantifoil Gold)
Interested in this product?
Get Best Quote

Suspended Monolayer Graphene on TEM Grids (Quantifoil) - Pack 4 units - Processed in Clean Room Class 1000

The monolayer graphene is grown by CVD and transferred onto a Quantifoil TEM grid. The graphene is suspended over 2μm holes.

GRAPHENE FILM
  • Growth method: CVD Synthesis
  • Transfer method: Wet transfer process
  • Size: 3mm (TEM grid diameter)
  • Appearance (color): Transparent
  • Transparency: > 97%
  • Number of graphene layers: 1
  • Coverage: > 95%
  • Thickness (theoretical): 0.345 nm
  • FET mobility on Al2O3: 2000 cm2/Vs
  • Hall mobility on SiO2: 2000-3500 cm2/Vs
  • Grain size: Up to 20 μm
TEM GRID SUBSTRATE
  • Type: QUANTIFOIL ® R 2/4
  • Hole size: 2 μm
  • Space between holes: 4 μm
  • Diameter: 3mm
  • Coating: Au coated
QUALITY CONTROL

All our samples are subjected to a rigorous QC in order to ensure a high quality and reproducibility of the graphene.

  • Raman Spectroscopy: I(G)/I(2D)<0.5; I(D)/I(G)<0.05
  • Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity
APPLICATIONS

Graphene/polymer composite materials, Batteries, Biomedical, Solar cells, Supercapacitors, Support for metallic catalysts, Low permeability materials, Biosensors, Multifunctional materials, Graphene research

View Complete Details

Yes, I am interested!

Hydrophilic Platinum Nanoparticles
Interested in this product?
Get Best Quote

Hydrophilic Platinum Nanoparticles

Rs 17,850 / BoxGet Latest Price

Physical StateLiquid
UsageLaboratory
Grade StandardReagent Grade, Analytical Grade

Platinum is one of the rarest and most expensive metals. It has high corrosion resistance and numerous catalytic applications including automotive catalytic converters and petrochemical cracking catalysts. Platinum nanoparticles are usually used in the form of colloid or suspension in a fluid. They are the subject of extensive research due to their antioxidant properties.

Specification: Average particle size: ca. 3-4 nm

Form aqueous colloidal solutions

Applications

The key applications areas of platinum nanoparticles are listed below:

  • Electrocatalysts and catalytic converters
  • Magnetic nanopowders
  • Polymer membranes
  • Cancer therapy
  • Coatings, plastics, nanofibers and textiles.

 

View Complete Details

Yes, I am interested!

Molybdenum Disulfide (Mos2) Pristine Flakes In Solution, 100
Interested in this product?
Get Best Quote

Molybdenum Disulfide (Mos2) Pristine Flakes In Solution, 100

Rs 24,500 / UnitGet Latest Price

Minimum Order Quantity: 1 Unit

Grade StandardBio-Tech Grade
Physical StateLiquid

Featured:
MoS2 Pristine Flakes are nanoscale crystals dispersed in ethanol/water solution. If separated from the solution, nano-MoS2forms emerald-green crystals that look different from the silver-black crystals of bulk MoS2.

Properties:

- Lateral Size: 100-400 nm

- Thickness: 1-8 monolayers

- Purity in dry phase: >99%

- Solution Concentration: 18 mg/L

Solution is stable under ambient conditions. Please ask us for any further details.

View Complete Details

Yes, I am interested!

  • Gfet-S20 For Sensing Applications
  • Gfet-S20 For Sensing Applications
Gfet-S20 For Sensing Applications
Interested in this product?
Get Best Quote
BrandUltrananotech

TYPICAL SPECIFICATIONS· Growth method: CVD synthesis· Chip dimensions: 10 mm x 10 mm· Chip thickness: 675 μm· Number of GFETs per chip:  36· Gate oxide thickness: 90 nm· Gate oxide material: SiO2· Resistivity of substrate: 1-10 Ω.cm· Metallization: Chromium/Gold-Palladium 2/50 nm· Graphene field-effect mobility: >1000 cm2/V.s· Encapsulation: 50 nm Al2O3 + 100 nm Si3N4· Dirac point (back gating): <50 V· Dirac point (liquid gating): <1V· Minimum working devices: >75 «SOLUTE MAXIMUM RATINGS· Maximum gate-source voltage: ± 50 V· Maximum temperature rating: 150 °C· Maximum drain-source current density 107A.cm-2

Additional Information:

  • Delivery Time: 15-20 days

View Complete Details

Yes, I am interested!

  • Gfet-S12 For Sensing Applications 1
  • Gfet-S12 For Sensing Applications 1
Gfet-S12 For Sensing Applications 1
Interested in this product?
Get Best Quote
BrandUltrananotech

TYPICAL SPECIFICATIONS· Growth method: CVD synthesis· Chip dimensions: 10 mm x 10 mm· Chip thickness: 675 μm· Number of GFETs per chip:  27· Gate oxide thickness: 90 nm· Gate oxide material: SiO2· Dielectric Constant of the SiO2 layer: 3.9· Resistivity of substrate: 1-10 Ω.cm· Metallization: Chromium/Gold 5/45nm· Graphene field-effect mobility: >1000 cm2/V.s· Dirac point: <50 V· Minimum working devices: >75 %ABSOLUTE MAXIMUM RATINGS· Maximum gate-source voltage: ± 50 V· Maximum temperature rating: 150 °C· Maximum drain-source current density 107A.cm-2

Additional Information:

  • Delivery Time: 15-20 days

View Complete Details

Yes, I am interested!

  • Gfet-S11 For Sensing Applications
  • Gfet-S11 For Sensing Applications
Gfet-S11 For Sensing Applications
Interested in this product?
Get Best Quote
BrandUltrananotech

TYPICAL SPECIFICATIONS· Growth method: CVD synthesis· Chip dimensions: 10 mm x 10 mm· Chip thickness: 675 μm· Number of GFETs per chip:  31· Gate oxide thickness: 90 nm· Gate oxide material: SiO2· Dielectric Constant of the SiO2 layer: 3.9· Resistivity of substrate: 1-10 Ω.cm· Metallization: Chromium/Gold 5/45nm· Graphene field-effect mobility: >1000 cm2/V.s· Dirac point: <50 V· Minimum working devices: >75 %ABSOLUTE MAXIMUM RATINGS· Maximum gate-source voltage: ± 50 V· Maximum temperature rating: 150 °C· Maximum drain-source current density 107A.cm-2

Additional Information:

  • Delivery Time: 15 -20 days

View Complete Details

Yes, I am interested!

Gfet-S10 For Sensing Applications
Interested in this product?
Get Best Quote
BrandUltrananotech

TYPICAL SPECIFICATIONS· Growth method: CVD synthesis· Chip dimensions: 10 mm x 10 mm· Chip thickness: 675 μm· Number of GFETs per chip:  36· Gate oxide thickness: 90 nm· Gate oxide material: SiO2· Dielectric Constant of the SiO2 layer: 3.9· Resistivity of substrate: 1-10 Ω.cm· Metallization: Chromium/Gold 2/50nm· Graphene field-effect mobility: >1000 cm2/V.s· Dirac point: <50 V· Minimum working devices: >75 %ABSOLUTE MAXIMUM RATINGS· Maximum gate-source voltage: ± 50 V· Maximum temperature rating: 150 °C· Maximum drain-source current density 107A.cm-2

Additional Information:

  • Delivery Time: 15 - 20 days

View Complete Details

Yes, I am interested!

GFET-S20 for Sensing applications
Interested in this product?
Get Best Quote

GFET-S20 for Sensing applications

Rs 32,000 / PieceGet Latest Price

Minimum Order Quantity: 1 Piece

GFET-S20 for Sensing applications

GFET-S20 (Die size 10 mm x 10 mm) - Processed in Clean Room Class 1000

The GFET-S20 chip from Graphenea provides 36 graphene devices distributed in four quadrants with the devices in the centre of the chip and the probe pads located near the periphery of the chip. All devices are of a 2-probe device geometry.

The devices are arranged in GFET-S20 to allow the application of a liquid drop on top of the graphene devices without covering the pads to either conduct a measurement in a liquid environment or to functionalize the devices using a liquid medium.

TYPICAL SPECIFICATIONS

· Growth method: CVD synthesis

· Chip dimensions: 10 mm x 10 mm

· Chip thickness: 675 μm

· Number of GFETs per chip: 36

· Gate oxide thickness: 90 nm

· Gate oxide material: SiO2

· Resistivity of substrate: 1-10 Ω.cm

· Metallization: Nickel/Aluminium 140 nm

· Graphene field-effect mobility: >1000 cm2/V.s

· Residual charge carrier density: <2 x 1012 cm-2

· Dirac point: 10-40 V

· Minimum working devices: >75 %

ABSOLUTE MAXIMUM RATINGS

· Maximum gate-source voltage: ± 50 V

· Maximum temperature rating: 150 °C

· Maximum drain-source current density 107A.cm-2

APPLICATIONS

Graphene field-effect transistors (GFETs) have unprecedented sensitivity to the surrounding environment and is an ideal transducer for a variety of sensing applications. Depending on the application, GFETs can be tuned to be sensitive only to the stimulus of interest and have shown breakthrough performance in areas such as photosensing, magnetic sensing and biosensing.

 

View Complete Details

Yes, I am interested!

GFET-S10 for Sensing applications
Interested in this product?
Get Best Quote

GFET-S10 for Sensing applications

Rs 32,000 / PieceGet Latest Price

Minimum Order Quantity: 1 Piece

TYPICAL SPECIFICATIONS

  • · Growth method: CVD synthesis
  • · Chip dimensions: 10 mm x 10 mm
  • · Chip thickness: 675 μm
  • · Number of GFETs per chip: 36
  • · Gate oxide thickness: 90 nm
  • · Gate oxide material: SiO2
  • · Resistivity of substrate: 1-10 Ω.cm
  • · Metallization: Nickel/Aluminium 140 nm
  • · Graphene field-effect mobility: >1000 cm2/V.s
  • · Residual charge carrier density: <2 x 1012 cm-2
  • · Dirac point: 10-40 V
  • · Minimum working devices: >75 %

 

ABSOLUTE MAXIMUM RATINGS

· Maximum gate-source voltage: ± 50 V

· Maximum temperature rating: 150 °C

· Maximum drain-source current density 107A.cm-2

 

 

APPLICATIONS

Graphene field-effect transistors (GFETs) have unprecedented sensitivity to the surrounding environment and is an ideal transducer for a variety of sensing applications. Depending on the application, GFETs can be tuned to be sensitive only to the stimulus of interest and have shown breakthrough performance in areas such as photosensing, magnetic sensing and biosensing.

 

View Complete Details

Yes, I am interested!
4.2/5★★★★★★★★★★

Reviewed by 44 Users

5 star22

4 star14

3 star5

2 star1

1 star2

User Satisfaction

Response85%

Quality100%

Delivery100%

Most Relevant Reviews

H

Hoe Mun Lin ★★★★★ ★★★★★

27-April-21

Response

M

Mahendra P N ★★★★★ ★★★★★

08-November-20

In this company reply,

Get in touch with us

Reach Us

Ultrananotech Private LimitedB-205, PRIME BLUE FOREST APPARTMENT, HOODI GARDEN MAIN ROAD,RAJAPALYA, BANGALORE, Bengaluru-560048, Karnataka, India

Dr. Arup Purkayastha (Managing Director)

View Mobile Number92% Call Response Rate

Send SMS
Send Email
Send Payment
Leave a Message, we will call you back!
Send your enquiry to this supplier
I agree to the terms and privacy policy

We Accept Online Payments

All Rights Reserved (Terms of Use)