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Transistors

Our range of products include Electronic Power Transistor, IRF520 Power MOSFET Module, Power Mosfet Transistor, E13007-2 Power Transistor, MJE3055T Power Transistor and 74HC04N.
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₹ 150/Piece
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  • Electronic Power Transistor
  • Electronic Power Transistor
  • Electronic Power Transistor
  • Electronic Power Transistor
  • Electronic Power Transistor
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Electronic Power Transistor

₹ 52/PieceGet Latest Price

Transistor TypeBipolar Junction Transistor (BJT)
Channel TypeP-Channel
Mounting TypeThrough Hole
Maximum Collector-Emitter Voltage200 V
Maximum Collector Current500mA

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It’s one of the basic building blocks of modern electronic devices.

🔸 Main Functions:
  1. Amplifier – Increases the strength of a weak signal (e.g., in audio amplifiers).

  2. Switch – Turns a current on or off (e.g., in digital circuits, power control).

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  • IRF520 Power MOSFET Module
  • IRF520 Power MOSFET Module
  • IRF520 Power MOSFET Module
  • IRF520 Power MOSFET Module
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IRF520 Power MOSFET Module

₹ 35/PieceGet Latest Price

Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)9.2A
Package TypeTO-220
ConfigurationSingle
Part NumberIRF520
Operating Temperature-55 to 175 Deg C

A Power MOSFET Module is an integrated high-power switching device that contains one or more MOSFETs in a single package. It's designed to handle high current and voltage levels efficiently in power electronics systems such as:

  • Motor drives

  • Power supplies

  • Solar inverters

  • Battery chargers

  • Electric vehicles (EVs)

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  • Power Mosfet Transistor
  • Power Mosfet Transistor
  • Power Mosfet Transistor
  • Power Mosfet Transistor
  • Power Mosfet Transistor
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Power Mosfet Transistor

₹ 50/PieceGet Latest Price

Drain-Source Voltage (VDS)1200V
Channel TypeP Channel
Continuous Drain Current (ID)120A
Linear Derating Factor25C
Gate Charge (Qg)70NC
Voltage600V
Drain-to-Source Voltage (Vds)100V

A Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a high-power semiconductor device designed for efficient switching and amplification in power electronics circuits. It is widely used in applications requiring high current, high voltage, and fast switching speeds.

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  • E13007-2 Power Transistor
  • E13007-2 Power Transistor
  • E13007-2 Power Transistor
  • E13007-2 Power Transistor
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E13007-2 Power Transistor

₹ 60/PieceGet Latest Price

Product Brochure

TypeHigh Voltage
Collector Current8 A
Collector Emitter Voltage700 V
Package TypeTO-220
PolarityNPN
Mounting TypeThrough Hole
Collector Dissipation80 W
Part NumberE13007-2
Storage Temperature-65 to 150 Deg C

A power transistor is a type of semiconductor device specifically designed to handle high voltage, high current, and high power. It acts as an electronic switch or amplifier in power electronic circuits.

Key Features:
  • Handles large amounts of power (voltage × current)

  • Designed with larger junctions than signal transistors

  • Mounted on heat sinks to dissipate heat

  • Comes in through-hole or surface-mount packages

  • Used in switching or linear modes



Additional Information:

  • Production Capacity: Standard
  • Delivery Time: Standard
  • Packaging Details: Standard

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  • MJE3055T Power Transistor
  • MJE3055T Power Transistor
  • MJE3055T Power Transistor
  • MJE3055T Power Transistor
  • MJE3055T Power Transistor
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MJE3055T Power Transistor

₹ 16/PieceGet Latest Price

Minimum Order Quantity: 100 Piece

Product Brochure

Collector Current10 A
Collector Emitter Voltage60 V
Package TypeTO-220
PolarityPNP
Mounting TypeThrough Hole
Part NumberMJE3055T
Power Dissipation75 W
Storage Temperature-55 to +150 Deg C

MJE3055T is a high-current NPN power bipolar junction transistor (BJT) designed for power switching and amplification applications. It is a plastic TO-220 version of the classic 2N3055, offering easier PCB mounting and heat-sinking.

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  • 74HC04N
  • 74HC04N
  • 74HC04N
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74HC04N

₹ 18/PieceGet Latest Price

Mounting TypeThrough-Hole
Part Number74HC04N
ManufacturerTexas Instruments (TI)
BrandTI
Supply Voltage24V
Package TypeSOP (Small Outline Package)
Interface TypeSPI
Number of Pins16
ApplicationConsumer Electronics, Automotive, Industrial Control, LED Lighting, Communications & Networking, Power Supply & Management, Medical Devices
RoHS StatusRoHS Compliant
PackagingTube
TypeInterface IC
IC TypeLogic IC

An integrated circuit (IC) is a compact electronic device that combines numerous microscopic electronic components�such as transistors, resistors, capacitors, and diodes�onto a single piece of semiconductor material, usually silicon. Basic Description: Full Name: Integrated Circuit (also called a microchip or chip) Function: Performs electronic functions like amplification, computation, signal processing, and data storage Size: Ranges from a few millimeters to centimeters Components Integrated: Thousands to billions of transistors and other elements Material: Primarily silicon, due to its semiconducting properties

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St13005A Power Transistor

₹ 15/PieceGet Latest Price

TypeMOSFET
Transistor TypeMOSFET
Collector Current50 A
Collector Emitter Voltage1200 V
Collector-Emitter Voltage600 V
Drain Current1 A
Package TypeTO 220
Transistor PolarityPNP
Power Dissipation50 W

The 13005 (MJE13005) transistor is primarily used for high-voltage, high-speed power switching applications. Common uses include switched-mode power supplies (SMPS), inverters, motor control, electronic ballasts, battery chargers, and as a general-purpose power transistor for switching and amplification in consumer and industrial electronics.  

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Ir2110Strpbf Power MOSFET Module

₹ 112/PieceGet Latest Price

Voltage4V
Model No.Ir2110Strpbf
Frequency60 Hz
Packaging TypeBox

Ir2110Strpbf Power MOSFET Module is a packaged set of MOSFET transistors (often more than one) plus supporting components (drivers, protection, sensors, etc.) designed to handle high power and simplify design in power electronics. I

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Irf510 Power Mosfet

₹ 11/PieceGet Latest Price

Minimum Order Quantity: 100 Piece

Drain-Source Voltage (VDS)1200V
Voltage800V
Continuous Drain Current (ID)120A
PolarityP-Channel
Linear Derating FactorIrf510 Power Mosfet
Gate Charge (Qg)Irf510 Power Mosfet
Drain Source ResistanceIrf510 Power Mosfet
Human Interface InputIrf510 Power Mosfet
Item CodeIrf510 Power Mosfet

The IRF510 is an N-Channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching and amplification in medium-power applications. This device is appreciated for its fast switching speeds, low cost, and ease of use in a variety of electronic projects. 

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IRFP2907PBF Infineon MOSFETs

₹ 12/PieceGet Latest Price

Minimum Order Quantity: 100 Piece

Drain-Source Voltage (VDS)1200V
TypeN Channel
Voltage800V
Continuous Drain Current (ID)120A
Linear Derating FactorIRFP2907PBF Infineon MOSFETs
Gate Charge (Qg)IRFP2907PBF Infineon MOSFETs
Drain Source ResistanceIRFP2907PBF Infineon MOSFETs
Human Interface InputIRFP2907PBF Infineon MOSFETs
Item CodeIRFP2907PBF Infineon MOSFETs

The Infineon IRFP2907PBF is a high-performance, N-channel HEXFET power MOSFET designed for demanding automotive and industrial applications. It features extremely low on-resistance and is built for efficient, high-speed switching.
  • Transistor polarity: N-Channel
  • Technology: HEXFET power MOSFET, utilizing a Stripe Planar design
  • Continuous drain current (Idcap I sub d𝐼𝑑): 209 A at a case temperature of 25°C (Tc=25∘Ccap T sub c equals 25 raised to the composed with power cap C𝑇𝑐=25∘𝐶)
  • Drain-to-source breakdown voltage (VDSScap V sub cap D cap S cap S end-sub𝑉𝐷𝑆𝑆): 75 V
  • On-resistance (RDS(on)cap R sub cap D cap S open paren o n close paren end-sub𝑅𝐷𝑆(𝑜𝑛)): 4.5 mΩ (maximum) at a gate-to-source voltage (Vgscap V sub g s end-sub𝑉𝑔𝑠) of 10 V and drain current (Idcap I sub d𝐼𝑑) of 125 A
  • Power dissipation (Pdcap P sub d𝑃𝑑): 470 W at Tc=25∘Ccap T sub c equals 25 raised to the composed with power cap C𝑇𝑐=25∘𝐶
  • Operating junction temperature (Tjcap T sub j𝑇𝑗): -55∘Cnegative 55 raised to the composed with power cap C−55∘𝐶 to +175∘Cpositive 175 raised to the composed with power cap C+175∘𝐶
  • Gate charge (Qgcap Q sub g𝑄𝑔): 620 nC (maximum)
  • Mounting type: Through-hole
  • Package type: TO-247AC 
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    2SA1941 And 2SC5198 Audio Power Transistor

    ₹ 150/PieceGet Latest Price

    Minimum Order Quantity: 50 Piece

    TypePower Module
    Transistor TypeMOSFET
    Collector Current50 A
    Collector Emitter Voltage1200 V
    Collector-Emitter Voltage600 V
    Drain Current100 A
    Package TypeTO 220
    Transistor PolarityPNP
    Power Dissipation50 W

    The 2SA1941 (PNP) and 2SC5198 (NPN) are a high-power complementary transistor pair designed specifically for use in the output stage of high-fidelity audio power amplifiers. They are known for their strong performance in Class A and Class AB amplifier circuits, delivering excellent linearity and low distortion.

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    TK17A80W,S4X MOSFETs Toshiba

    ₹ 25/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Drain-Source Voltage (VDS)1200V
    Voltage800V
    Continuous Drain Current (ID)100A
    Linear Derating FactorTK17A80W,S4X MOSFETs Toshiba
    Gate Charge (Qg)TK17A80W,S4X MOSFETs Toshiba
    Drain Source ResistanceTK17A80W,S4X MOSFETs Toshiba
    Human Interface InputTK17A80W,S4X MOSFETs Toshiba
    Item CodeTK17A80W,S4X MOSFETs Toshiba

    The TK17A80W,S4X is a Toshiba N-channel power MOSFET from the DTMOSIV series, designed for switching voltage regulator applications. It is a high-voltage, high-efficiency device with a low drain-source on-resistance (RDS(ON)cap R sub cap D cap S open paren cap O cap N close paren end-sub𝑅𝐷𝑆(𝑂𝑁))
  • Drain-Source Voltage (VDSScap V sub cap D cap S cap S end-sub𝑉𝐷𝑆𝑆): 800 V.
  • Continuous Drain Current (IDcap I sub cap D𝐼𝐷): 17 A.
  • Drain-Source On-Resistance (RDS(ON)cap R sub cap D cap S open paren cap O cap N close paren end-sub𝑅𝐷𝑆(𝑂𝑁)): 0.25 Ωcap omegaΩ (typical) and 290 mΩcap omegaΩ (max) @ 10V, 8.5A.
  • Power Dissipation (PDcap P sub cap D𝑃𝐷): 45 W.
  • Gate Threshold Voltage (VGS(th)cap V sub cap G cap S open paren t h close paren end-sub𝑉𝐺𝑆(𝑡ℎ)): 3.0 to 4.0 V.
  • Gate Charge (Qgcap Q sub g𝑄𝑔): 32 nC (max) @ 10 V.
  • Package: TO-220SIS (fully isolated package).
  • Mounting: Through-hole. 
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    • IRFZ48NPBF Infineon MOSFETs
    • IRFZ48NPBF Infineon MOSFETs
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    IRFZ48NPBF Infineon MOSFETs

    ₹ 14/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Drain-Source Voltage (VDS)1200V
    TypeN Channel
    Continuous Drain Current (ID)75A
    PolarityN-Channel
    Package TypeTO-220
    ConfigurationSingle
    Maximum Operating Junction Temperature175 °C

    The Infineon IRFZ48NPBF is a high-performance N-channel power MOSFET from the HEXFET series, known for its low on-resistance and high-speed switching. It is designed for robust industrial applications that require high power efficiency. 

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    WML13N80M3 WAYON Super Junction MOSFET 800V

    ₹ 70/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Drain-Source Voltage (VDS)900V
    Voltage800V
    Continuous Drain Current (ID)100A
    PolarityP-Channel
    Drain-Source On-Resistance (RDS(on))1000 mΩ (1 Ω)
    Package TypeTO-252 (DPAK)
    Linear Derating FactorKey specificationsDrain-Source Voltage ((V_{DSS})): 800V.Continuous Drain Current ((I_{D})): 13
    Total Gate Charge (Qg)80 nC
    Gate Threshold TypeStandard Level
    Maximum Operating Junction Temperature175 °C

    The WML13N80M3 is a high-performance 800V, 13A N-Channel Super Junction MOSFET manufactured by WAYON. Designed for high-voltage and high-efficiency power electronics, this transistor is built with the company's proprietary WMOS™ M3 technology. Key specifications 
    • Drain-Source Voltage (VDSScap V sub cap D cap S cap S end-sub𝑉𝐷𝑆𝑆): 800V.
    • Continuous Drain Current (IDcap I sub cap D𝐼𝐷): 13A at 25°C.
    • Maximum Power Dissipation (PDcap P sub cap D𝑃𝐷): 33W.
    • Technology: WMOS™ M3, a Super Junction (SJ) technology that achieves very low on-resistance (RDS(on)cap R sub cap D cap S open paren o n close paren end-sub𝑅𝐷𝑆(𝑜𝑛)) and gate charge (Qgcap Q sub g𝑄𝑔).
    • Package: Primarily available in TO-220FP (Fully Isolated Package) for enhanced thermal performance, and potentially TO-247, depending on the variant.
    • Switching Speed: Optimized for fast switching.
    • Robustness: Features high avalanche ruggedness. 

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    ULN2003A STMicroelectronics Transistors

    ₹ 5.75/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Transistor TypeMOSFET Transistor
    Mounting TypeThrough Hole
    Channel TypePNP
    Maximum Collector-Emitter Voltage20 V
    Maximum Collector Current100mA
    Part NumberST

    The STMicroelectronics ULN2003A is a high-voltage, high-current Darlington transistor array. It is a monolithic integrated circuit containing seven NPN Darlington pairs with open collectors and common emitters. This design provides high current gain, allowing it to drive powerful loads from low-power logic signals
    • Integrated Darlington pairs: The chip includes seven independent NPN Darlington pairs. A Darlington pair is a special configuration of two bipolar junction transistors (BJTs) that acts as a single, high-gain transistor.
    • High-current output: Each channel can handle a continuous collector current of 500 mA, with peak current capabilities of 600 mA. For even higher current needs, multiple channels can be connected in parallel.
    • High-voltage output: The outputs can handle up to 50 V, making the array suitable for controlling loads that operate at higher voltages than standard logic circuits.
    • Input compatibility: The ULN2003A is specifically designed to be compatible with 5V TTL and CMOS logic, allowing it to be driven directly by microcontrollers and digital logic circuits.
    • Internal suppression diodes: The IC includes integrated common-cathode clamp diodes. These are crucial for protecting the transistors from voltage spikes that occur when switching inductive loads like relays, solenoids, or motors.
    • Simplified layout: The input pins are placed opposite the output pins in the package, which helps simplify circuit board design.
    • Package type: STMicroelectronics offers the ULN2003A in a 16-pin dual in-line package (DIP), as well as surface-mount options.

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    IRF9530N Power MOSFET

    ₹ 16/PieceGet Latest Price

    Drain-Source Voltage (VDS)1200V
    Voltage800V
    Continuous Drain Current (ID)120A
    Linear Derating FactorIRF9530N Power MOSFET
    Gate Charge (Qg)IRF9530N Power MOSFET
    Drain Source ResistanceIRF9530N Power MOSFET
    Human Interface InputIRF9530N Power MOSFET
    Item CodeIRF9530N Power MOSFET

    The IRF9530N is a P-channel Power MOSFET designed for high-performance switching applications, known for its high voltage tolerance and low on-resistance. It is manufactured by Infineon Technologies and other suppliers 
  • MOSFET type: P-Channel
  • Package: TO-220, designed for easy mounting and excellent heat dissipation
  • Continuous drain current (IDcap I sub cap D𝐼𝐷): -12A to -14A
  • Drain-source voltage (VDScap V sub cap D cap S end-sub𝑉𝐷𝑆): -100V
  • On-resistance (RDS(ON)cap R sub cap D cap S open paren cap O cap N close paren end-sub𝑅𝐷𝑆(𝑂𝑁)): 0.20 to 0.30 Ω maximum at a gate-source voltage (VGScap V sub cap G cap S end-sub𝑉𝐺𝑆) of -10V
  • Gate-source voltage (VGScap V sub cap G cap S end-sub𝑉𝐺𝑆): ±20V
  • Gate threshold voltage (VGS(th)cap V sub cap G cap S open paren t h close paren end-sub𝑉𝐺𝑆(𝑡ℎ)): -2V to -4V
  • Power dissipation (PDcap P sub cap D𝑃𝐷): 79W to 88W
  • Operating temperature range: -55°C to +175°C
  • Switching speed: Fast switching capabilities
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    Irf9540Pbf Vishay Mosfets

    ₹ 25/PieceGet Latest Price

    Drain-Source Voltage (VDS)650V
    Voltage600V
    Continuous Drain Current (ID)100A
    Linear Derating FactorIrf9540Pbf Vishay Mosfets
    Gate Charge (Qg)Irf9540Pbf Vishay Mosfets
    Drain Source ResistanceIrf9540Pbf Vishay Mosfets
    Human Interface InputIrf9540Pbf Vishay Mosfets
    Item CodeIrf9540Pbf Vishay Mosfets

    The Vishay IRF9540PBF is a P-channel power MOSFET designed for high-current and fast-switching applications. Produced by Vishay Siliconix, it is a robust component suitable for use in various industrial and power management systems.
  • Manufacturer: Vishay Siliconix
  • Transistor polarity: P-channel
  • Drain-Source Voltage (VDSScap V sub cap D cap S cap S end-sub𝑉𝐷𝑆𝑆): -100 V
  • Continuous Drain Current (IDcap I sub cap D𝐼𝐷) @ 25°C: -19 A (package limited)
  • Pulsed Drain Current (IDMcap I sub cap D cap M end-sub𝐼𝐷𝑀): -72 A
  • On-State Resistance (RDS(on)cap R sub cap D cap S open paren o n close paren end-sub𝑅𝐷𝑆(𝑜𝑛)): 200 mΩcap omegaΩ at VGS=-10cap V sub cap G cap S end-sub equals negative 10𝑉𝐺𝑆=−10 V and ID=-11cap I sub cap D equals negative 11𝐼𝐷=−11 A
  • Power Dissipation (PDcap P sub cap D𝑃𝐷): 150 W
  • Gate-Source Voltage (VGScap V sub cap G cap S end-sub𝑉𝐺𝑆): ±20 V
  • Gate Charge (Qgcap Q sub g𝑄𝑔): 61 nC at VGS=-10cap V sub cap G cap S end-sub equals negative 10𝑉𝐺𝑆=−10 V
  • Package Type: TO-220AB, a standard through-hole package for commercial and industrial applications
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    IRF840PBF Vishay MOSFETs

    ₹ 22/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Drain-Source Voltage (VDS)900V
    Voltage600V
    Continuous Drain Current (ID)75A
    Linear Derating FactorIRF840PBF Vishay MOSFETs
    Gate Charge (Qg)IRF840PBF Vishay MOSFETs
    Drain Source ResistanceIRF840PBF Vishay MOSFETs
    Human Interface InputIRF840PBF Vishay MOSFETs
    Item CodeIRF840PBF Vishay MOSFETs

    The IRF840PBF is a high-voltage N-channel power MOSFET manufactured by Vishay, used primarily for high-speed switching applications. The "PBF" suffix indicates that the device is lead-free. It is housed in a standard TO-220AB package, which is suitable for industrial applications involving up to 50 watts of power dissipation

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    IRFP264PBF Vishay MOSFETs

    ₹ 35/PieceGet Latest Price

    Drain-Source Voltage (VDS)1200V
    Voltage800V
    Continuous Drain Current (ID)120A

    The IRFP264PBF is an N-channel power MOSFET manufactured by Vishay. It is designed for applications requiring fast switching, low on-resistance, and robust design. The transistor is housed in a TO-247AC package and is suitable for commercial and industrial use in high-power applications

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    IRF3205PBF Infineon MOSFETs

    ₹ 22/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Drain-Source Voltage (VDS)900V
    TypeN Channel
    Continuous Drain Current (ID)100A

    The Infineon IRF3205PBF is a high-performance, N-channel power MOSFET from the HEXFET series, designed for high-current, low-voltage switching applications. This component features low on-resistance, fast switching speeds, and high reliability, making it suitable for a wide range of industrial, automotive, and power electronics applications. 

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    STP90NF03L STMicroelectronics MOSFETs

    ₹ 35/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Drain-Source Voltage (VDS)1200V
    Voltage600V
    Continuous Drain Current (ID)120A
    PolarityP-Channel
    Package TypeTO-220

    The STP90NF03L is an N-channel power MOSFET manufactured by STMicroelectronics. It is a high-performance, high-efficiency transistor with a low on-state resistance (RDS(on)cap R sub cap D cap S open paren o n close paren end-sub𝑅𝐷𝑆(𝑜𝑛)) and optimized gate charge, which is designed for applications like DC-DC converters and motor drivers.Based on the STMicroelectronics datasheet and information from distributors, here are the key specifications for the STP90NF03L: Transistor polarity: N-Channel
    • Package type: TO-220-3 (Through Hole)
    • Drain-source voltage (VDSScap V sub cap D cap S cap S end-sub𝑉𝐷𝑆𝑆): 30 V
    • Continuous drain current (IDcap I sub cap D𝐼𝐷): 90 A at TC=25°Ccap T sub cap C equals 25 degrees cap C𝑇𝐶=25°𝐶 and 65 A at TC=100°Ccap T sub cap C equals 100 degrees cap C𝑇𝐶=100°𝐶
    • Pulsed drain current (IDMcap I sub cap D cap M end-sub𝐼𝐷𝑀): 360 A
    • Drain-source on-resistance (RDS(on)cap R sub cap D cap S open paren o n close paren end-sub𝑅𝐷𝑆(𝑜𝑛)): <0.0065Ωis less than 0.0065 cap omega<0.0065Ω (or 6.5 mΩ) @ ID=45A,VGS=10Vcap I sub cap D equals 45 cap A comma cap V sub cap G cap S end-sub equals 10 cap V𝐼𝐷=45𝐴,𝑉𝐺𝑆=10𝑉
    • Gate-source voltage (VGScap V sub cap G cap S end-sub𝑉𝐺𝑆): ±20 V
    • Total power dissipation (PTOTcap P sub cap T cap O cap T end-sub𝑃𝑇𝑂𝑇): 150 W at TC=25°Ccap T sub cap C equals 25 degrees cap C𝑇𝐶=25°𝐶
    •  

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    ULN2803 STMicroelectronics Transistors

    ₹ 16/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    TypeLogic IC
    ConfigurationDual
    Mounting TypeDIP
    Supply Voltage12V
    Package TypeDIP
    BrandST
    Part NumberULN2803
    Current1000V

    The STMicroelectronics ULN2803A is an integrated circuit (IC) consisting of an array of eight NPN Darlington transistors. It is designed to act as an interface between low-level logic circuits, like microcontrollers, and higher-current or higher-voltage loads. 
    • Darlington transistor array: The chip contains eight independent Darlington pairs, each of which functions as a high-current switch. A Darlington pair consists of two transistors connected to achieve a very high current gain.
    • High-voltage and high-current capability: Each channel can handle a continuous collector current of 500 mA and can withstand voltages up to 50 V in the OFF state. For even higher current requirements, outputs can be connected in parallel.
    • Integrated protection diodes: The array includes common-cathode clamp diodes for each output. These freewheeling diodes suppress inductive voltage spikes that are produced when switching inductive loads like relays and motors, protecting the IC and other circuitry.
    • Logic compatibility: Built-in 2.7 kΩ series base resistors for each Darlington pair allow the IC to be driven directly by 5V TTL or CMOS logic devices without requiring additional components.
    • Package and layout: The ULN2803A is commonly available in an 18-pin Dual In-line Package (DIP), with inputs and outputs pinned on opposite sides to simplify printed circuit board (PCB) layout.

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    Irfp350Pbf Vishay Mosfets

    ₹ 18/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Drain-Source Voltage (VDS)900V
    Voltage800V
    Continuous Drain Current (ID)120A
    PolarityP-Channel
    Package TypeTO-220
    Linear Derating FactorIrfp350Pbf Vishay Mosfets
    Gate Charge (Qg)Irfp350Pbf Vishay Mosfets
    Drain Source ResistanceIrfp350Pbf Vishay Mosfets
    Human Interface InputIrfp350Pbf Vishay Mosfets
    Item CodeIrfp350Pbf Vishay Mosfets
    Total Gate Charge (Qg)150 nC
    ConfigurationSingle

    The IRF350 is a legacy N-channel enhancement mode power MOSFET, originally produced by manufacturers like International Rectifier and Fairchild Semiconductor. Known for its rugged, hermetically sealed TO-3 package, it is designed for high-voltage, high-power switching applications. While still available from some vendors, modern alternatives like the IRFP350 are now more common.

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    MJE2955 Power Transistor

    ₹ 15/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    TypeMOSFET
    Transistor TypeMOSFET
    Collector Current50 A
    Collector Emitter Voltage1200 V
    Collector-Emitter Voltage600 V
    Drain Current100 A
    Package TypeTO 220
    Transistor PolarityPNP
    Power Dissipation50 W

    The MJE2955 is a general-purpose PNP power transistor designed for switching and amplification applications. It is known for handling high current and power and is often housed in a robust TO-220 package with a metal mounting tab for heat dissipation. 

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    WML10N80M3 Wayon Mosfet

    ₹ 32/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Drain-Source Voltage (VDS)900V
    Voltage800V
    Continuous Drain Current (ID)100A

    The WML10N80M3 is a high-voltage, N-channel power MOSFET manufactured by WAYON. It is built with WMOS M3 technology, which is designed for superior efficiency and high-speed switching in power electronics. 
    Key specifications Type: N-channel, unipolar power MOSFET with an enhancement-mode channel.
    • Drain-Source Voltage (VDSScap V sub cap D cap S cap S end-sub𝑉𝐷𝑆𝑆): 800V.
    • Continuous Drain Current (IDcap I sub cap D𝐼𝐷): 10A.
    • Power Dissipation: 31W.
    • Gate-Source Voltage (VGScap V sub cap G cap S end-sub𝑉𝐺𝑆): $pm$30V.
    • On-State Resistance (RDS(on)cap R sub cap D cap S open paren o n close paren end-sub𝑅𝐷𝑆(𝑜𝑛)): 1.03Ωcap omegaΩ.
    • Package: TO220FP or TO-220F, a fully isolated through-hole package for improved thermal performance and mechanical stability.
    • Gate Charge (Qgcap Q sub g𝑄𝑔): 13.9nC.

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    • Mosfet Power Modules
    • Mosfet Power Modules
    • Mosfet Power Modules
    • Mosfet Power Modules
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    Mosfet Power Modules

    ₹ 150/PieceGet Latest Price

    Collector Emitter Voltage2500 V
    Voltage4V
    Drain-Source Voltage (VDS)650V
    Collector Current900 A
    Continuous Drain Current (ID)100A
    Module ConfigurationDual IGBT
    Linear Derating Factor25C
    Gate Charge (Qg)70NC

    A MOSFET Power Module is an integrated package that contains one or more power MOSFET transistors along with additional components (like diodes, drivers, or sensors) designed to handle high current and high voltage switching applications efficiently and reliably.

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    • L7812 CV TG Transistor
    • L7812 CV TG Transistor
    • L7812 CV TG Transistor
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    L7812 CV TG Transistor

    ₹ 8.50/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Transistor TypeMOSFET Transistor
    Channel TypePNP
    Mounting TypeThrough Hole
    Maximum Collector-Emitter Voltage200 V
    Maximum Collector Current10A
    Part NumberL7812CV ST

    An integrated circuit (IC) is a compact electronic device that combines numerous microscopic electronic components�such as transistors, resistors, capacitors, and diodes�onto a single piece of semiconductor material, usually silicon. Basic Description: Full Name: Integrated Circuit (also called a microchip or chip) Function: Performs electronic functions like amplification, computation, signal processing, and data storage Size: Ranges from a few millimeters to centimeters Components Integrated: Thousands to billions of transistors and other elements Material: Primarily silicon, due to its semiconducting properties

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    • UTC 8N80L N-Channel MOSFET, 800V, 8A
    • UTC 8N80L N-Channel MOSFET, 800V, 8A
    • UTC 8N80L N-Channel MOSFET, 800V, 8A
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    UTC 8N80L N-Channel MOSFET, 800V, 8A

    ₹ 20/PieceGet Latest Price

    Drain-Source Voltage (VDS)800 V
    Continuous Drain Current (ID)8A
    PolarityN-Channel
    Package TypeTO-220
    BrandUTC
    Part NumberUTC 8N80L
    Power Dissipation59 W
    Storage Temperature-55 to 150 Deg C

    The UTC8N80 is an N-channel mode power MOSFET that offers customers DMOS and planar stripe technology by utilising UTC's cutting-edge technology. This innovation permits a minimum enhanced switching performance with low on-state resistance. It can also tolerate large energy pulses in the avalanche and commutation modes.

    Typically, a high-efficiency switch mode power supply uses the UTC 8N80.

    Features:

    • RDS(ON) ≤ 1.45Ω @ VGS=10V, ID=4.0A
    • Improved dv/dt Capability
    • Fast Switching Speed
    • 100% Avalanche Tested
    • It has a small size
    • It's not too costly
    • Highly efficient

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    • Igbt Power Modules
    • Igbt Power Modules
    • Igbt Power Modules
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    Igbt Power Modules

    ₹ 150/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Collector Current200 A
    Module ConfigurationSingle IGBT
    Usage/ApplicationUPS
    Current Rating4.5
    Brandimported
    Country of OriginMade in India
    Collector Emitter Voltage3300 V
    Voltage600 V

    An IGBT (Insulated-Gate Bipolar Transistor) power module is a hybrid power semiconductor device that combines the high input impedance of a MOSFET with the high voltage and current handling of a bipolar transistor, acting as a high-speed electronic switch. It integrates multiple IGBT chips and associated components like freewheeling diodes into a single package to manage high power efficiently, making it essential for applications such as motor drives, inverters, and power supplies. 

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    • TYN612 MRG SCR Thyristor
    • TYN612 MRG SCR Thyristor
    • TYN612 MRG SCR Thyristor
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    TYN612 MRG SCR Thyristor

    ₹ 28/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Product Brochure

    Repetitive Peak Off State Voltage600 V
    Average On State Current12 A
    Package TypeTO-220AB
    Gate Trigger Current25 mA
    Part NumberTYN612
    Mounting TypeThrough Hole

    Thyristor TYN612 is fit for all modes of control like overvoltage crowbar protection, motor control circuit, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits.

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    • Irfz44Npbf  Mosfet Transistor
    • Irfz44Npbf  Mosfet Transistor
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    Irfz44Npbf Mosfet Transistor

    ₹ 10/PieceGet Latest Price

    Channel TypeP Channel
    Drain-to-Source Voltage (Vds)600V
    BrandInfineon
    Part NumberIRFZ44NPBF
    Pin Count2

    Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

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    • Bc847B Transistor Mic
    • Bc847B Transistor Mic
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    Bc847B Transistor Mic

    ₹ 0.65/PieceGet Latest Price

    Minimum Order Quantity: 1000 Piece

    Voltage150 V
    Transistor TypeNPN
    Mounting TypeSMD
    Brandmic
    Part Numberbc847b

    Bc847B Transistor Mic at given base current: typically a few hundred millivolts; exact spec depends on test conditions. For example V_CE(sat) might be ~400 mV with certain base drive.

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    Connector TypeM12
    No. Of Pins4 Pin
    Mounting TypeThrough Hole
    Telecom/Data/Network4PIN
    Electrical Fitting4PIN CONNECTOR
    Frequency60 Hz
    Voltage220 V
    Pin4 Pin
    ShapeRound

    This is an imported 4 pin cable type Mini Round Shell (MRS) Aviation Plug socket Connector. This connector is also called GX16-4Pin Aviation Plug Male And Female Pin Connector Circular Connectors Socket Plug GX16 Diameter 16mm. This Product is Known as a 4 pin Aviation Plug, 4 pin BNC connector, 4 pin Connector, 4 Pin Plug, 4pin Aviation male and Female Plug, 4Pin Aviation Connector, 4 pin Aviation Connector Plug, aviator plug, GX-12 PLUG, GX16 air plug, GX16 air plug, 4 PIN Cable Type MRS Connector, 4 Pin Aviation Cable Type MRS Connector, 4 Pin MRS Connector

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    Bd 139 Transistor Cdil

    ₹ 0.85/PieceGet Latest Price

    Minimum Order Quantity: 500 Piece

    Transistor TypeDarlington Transistor
    Channel TypePNP
    Mounting TypeThrough Hole
    Maximum Collector-Emitter Voltage200 V
    Maximum Collector Current10A
    Part NumberBD139 CDIL

    The BD139 from Continental Device India Ltd. (CDIL) is an NPN epitaxial silicon power transistor in a TO-126 plastic package, designed for audio amplifier and driver applications, and automotive uses. Key specifications include an 80V collector-emitter breakdown voltage, a maximum continuous collector current of 1.5A, and a maximum collector peak current of 3A. It offers features like low saturation voltage, simple drive requirements, high safe operating area, and suitability for low distortion complementary designs. 

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    PolarityN Channel
    Drain Source Voltage30 V
    Drain Current200 mA
    Package TypeTO-220
    Gate Charge10 nC
    RDS On2 mΩ
    Mounting TypeThrough Hole
    Body DiodeYes

    The UTC 4N65L is a 650V, 4A N-Channel Power MOSFET in a TO-220F package, designed for high-efficiency switching applications.

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    AOD413 N Channel Power MOSFET TO252 DPAK

    ₹ 12/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    PolarityN Channel
    Drain Source Voltage600 V
    Drain Current500 mA
    Package TypeTO-220
    Gate Charge200 nC
    RDS On200 mΩ
    Drive Voltage15 V
    Mounting TypeThrough Hole
    Body DiodeSchottky

    Edison Electronics” is Trader and Retailer of Integrated Circuit, Transistors, Optocoupler, Capacitor, Microcontroller, Light Emitting Diode, Diode, Atmel Microcontroller and much more. Through the years the company has created a niche customer base through its large network of branches across India and by striving to achieve total customer satisfaction.

    Under the valuable guidance of our mentor, Mr. Narpat Panwar (CEO), we are growing with a notable rate in the market. He has spent long years in the industry to have rich industrial experience enabling us to understand the varied requirements of our clients.

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    SVF7N65F 650V 7A N Channel MOSFET TO220F

    ₹ 9/PieceGet Latest Price

    PolarityN Channel
    Drain Source Voltage30 V
    Drain Current200 mA
    Package TypeTO-220
    Gate Charge10 nC
    Drive Voltage4.5 V
    Mounting TypeThrough Hole
    Body DiodeYes

    The SVF7N65F is a 650V, 7A N-channel high-voltage MOSFET in a fully isolated TO-220F package, designed for high-efficiency switching, power management, and industrial applications.

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    Semikron Skm145Gb066D Igbt Modules

    ₹ 265/PieceGet Latest Price

    Minimum Order Quantity: 100 Piece

    Collector-Emitter Voltage1200 V
    Collector Current1200 A
    ConfigurationThree Phase Inverter
    Package/CaseModule
    NTC ThermistorYes
    IGBT TypeTrench Field Stop
    Operating Temperature-40°C to 175°C
    BrandIXYS

    Edison Electronics” is Trader and Retailer of Integrated Circuit, Transistors, Optocoupler, Capacitor, Microcontroller, Light Emitting Diode, Diode, Atmel Microcontroller and much more. Through the years the company has created a niche customer base through its large network of branches across India and by striving to achieve total customer satisfaction.

    Under the valuable guidance of our mentor, Mr. Narpat Panwar (CEO), we are growing with a notable rate in the market. He has spent long years in the industry to have rich industrial experience enabling us to understand the varied requirements of our clients.

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    Skm100Gb12T4 Igbt Modules

    ₹ 265/PieceGet Latest Price

    Minimum Order Quantity: 50 Piece

    Collector-Emitter Voltage650 V
    Collector Current1200 A
    ConfigurationThree Phase Inverter
    Package/CaseSOT-227-4
    NTC ThermistorYes
    Operating Temperature-55°C to 150°C
    BrandIXYS

    Edison Electronics” is Trader and Retailer of Integrated Circuit, Transistors, Optocoupler, Capacitor, Microcontroller, Light Emitting Diode, Diode, Atmel Microcontroller and much more. Through the years the company has created a niche customer base through its large network of branches across India and by striving to achieve total customer satisfaction.

    Under the valuable guidance of our mentor, Mr. Narpat Panwar (CEO), we are growing with a notable rate in the market. He has spent long years in the industry to have rich industrial experience enabling us to understand the varied requirements of our clients.

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    SKM400GB125D Semikron IGBT Module

    ₹ 325/PieceGet Latest Price

    Collector-Emitter Voltage1700 V
    Collector Current1200 A
    ConfigurationThree Phase Inverter
    Package/CaseModule
    NTC ThermistorYes
    IGBT TypeTrench
    BrandInfineon

    Edison Electronics” is Trader and Retailer of Integrated Circuit, Transistors, Optocoupler, Capacitor, Microcontroller, Light Emitting Diode, Diode, Atmel Microcontroller and much more. Through the years the company has created a niche customer base through its large network of branches across India and by striving to achieve total customer satisfaction.

    Under the valuable guidance of our mentor, Mr. Narpat Panwar (CEO), we are growing with a notable rate in the market. He has spent long years in the industry to have rich industrial experience enabling us to understand the varied requirements of our clients.

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