- Electronic Power Transistor
- IRF520 Power MOSFET Module
- Power Mosfet Transistor
- E13007-2 Power Transistor
- MJE3055T Power Transistor
- 74HC04N
- St13005A Power Transistor
- Ir2110Strpbf Power MOSFET Module
- Irf510 Power Mosfet
- IRFP2907PBF Infineon MOSFETs
- 2SA1941 And 2SC5198 Audio Power Transistor
- TK17A80W,S4X MOSFETs Toshiba
- IRFZ48NPBF Infineon MOSFETs
- WML13N80M3 WAYON Super Junction MOSFET 800V
- ULN2003A STMicroelectronics Transistors
- IRF9530N Power MOSFET
- Irf9540Pbf Vishay Mosfets
- IRF840PBF Vishay MOSFETs
- IRFP264PBF Vishay MOSFETs
- IRF3205PBF Infineon MOSFETs
- STP90NF03L STMicroelectronics MOSFETs
- ULN2803 STMicroelectronics Transistors
- Irfp350Pbf Vishay Mosfets
- MJE2955 Power Transistor
- WML10N80M3 Wayon Mosfet
- Mosfet Power Modules
- L7812 CV TG Transistor
- UTC 8N80L N-Channel MOSFET, 800V, 8A
- Igbt Power Modules
- TYN612 MRG SCR Thyristor
- Irfz44Npbf Mosfet Transistor
- Bc847B Transistor Mic
- 4 Pin Round Cell Metal Connector, Brass, Male
- Bd 139 Transistor Cdil
- UTC 4N65L 650V 4A N Channel Power MOSFET TO 220F
- AOD413 N Channel Power MOSFET TO252 DPAK
- SVF7N65F 650V 7A N Channel MOSFET TO220F
- Semikron Skm145Gb066D Igbt Modules
- Skm100Gb12T4 Igbt Modules
- SKM400GB125D Semikron IGBT Module
Transistors
Electronic Power Transistor
₹ 52/PieceGet Latest Price
| Transistor Type | Bipolar Junction Transistor (BJT) |
| Channel Type | P-Channel |
| Mounting Type | Through Hole |
| Maximum Collector-Emitter Voltage | 200 V |
| Maximum Collector Current | 500mA |
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It’s one of the basic building blocks of modern electronic devices.
🔸 Main Functions:-
Amplifier – Increases the strength of a weak signal (e.g., in audio amplifiers).
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Switch – Turns a current on or off (e.g., in digital circuits, power control).
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IRF520 Power MOSFET Module
₹ 35/PieceGet Latest Price
| Drain-Source Voltage (VDS) | 100V |
| Continuous Drain Current (ID) | 9.2A |
| Package Type | TO-220 |
| Configuration | Single |
| Part Number | IRF520 |
| Operating Temperature | -55 to 175 Deg C |
A Power MOSFET Module is an integrated high-power switching device that contains one or more MOSFETs in a single package. It's designed to handle high current and voltage levels efficiently in power electronics systems such as:
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Motor drives
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Power supplies
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Solar inverters
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Battery chargers
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Electric vehicles (EVs)
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Power Mosfet Transistor
₹ 50/PieceGet Latest Price
| Drain-Source Voltage (VDS) | 1200V |
| Channel Type | P Channel |
| Continuous Drain Current (ID) | 120A |
| Linear Derating Factor | 25C |
| Gate Charge (Qg) | 70NC |
| Voltage | 600V |
| Drain-to-Source Voltage (Vds) | 100V |
A Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a high-power semiconductor device designed for efficient switching and amplification in power electronics circuits. It is widely used in applications requiring high current, high voltage, and fast switching speeds.
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| Type | High Voltage |
| Collector Current | 8 A |
| Collector Emitter Voltage | 700 V |
| Package Type | TO-220 |
| Polarity | NPN |
| Mounting Type | Through Hole |
| Collector Dissipation | 80 W |
| Part Number | E13007-2 |
| Storage Temperature | -65 to 150 Deg C |
A power transistor is a type of semiconductor device specifically designed to handle high voltage, high current, and high power. It acts as an electronic switch or amplifier in power electronic circuits.
Key Features:-
Handles large amounts of power (voltage × current)
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Designed with larger junctions than signal transistors
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Mounted on heat sinks to dissipate heat
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Comes in through-hole or surface-mount packages
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Used in switching or linear modes
Additional Information:
- Production Capacity: Standard
- Delivery Time: Standard
- Packaging Details: Standard
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| Collector Current | 10 A |
| Collector Emitter Voltage | 60 V |
| Package Type | TO-220 |
| Polarity | PNP |
| Mounting Type | Through Hole |
| Part Number | MJE3055T |
| Power Dissipation | 75 W |
| Storage Temperature | -55 to +150 Deg C |
MJE3055T is a high-current NPN power bipolar junction transistor (BJT) designed for power switching and amplification applications. It is a plastic TO-220 version of the classic 2N3055, offering easier PCB mounting and heat-sinking.
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74HC04N
₹ 18/PieceGet Latest Price
| Mounting Type | Through-Hole |
| Part Number | 74HC04N |
| Manufacturer | Texas Instruments (TI) |
| Brand | TI |
| Supply Voltage | 24V |
| Package Type | SOP (Small Outline Package) |
| Interface Type | SPI |
| Number of Pins | 16 |
| Application | Consumer Electronics, Automotive, Industrial Control, LED Lighting, Communications & Networking, Power Supply & Management, Medical Devices |
| RoHS Status | RoHS Compliant |
| Packaging | Tube |
| Type | Interface IC |
| IC Type | Logic IC |
An integrated circuit (IC) is a compact electronic device that combines numerous microscopic electronic components�such as transistors, resistors, capacitors, and diodes�onto a single piece of semiconductor material, usually silicon. Basic Description: Full Name: Integrated Circuit (also called a microchip or chip) Function: Performs electronic functions like amplification, computation, signal processing, and data storage Size: Ranges from a few millimeters to centimeters Components Integrated: Thousands to billions of transistors and other elements Material: Primarily silicon, due to its semiconducting properties
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St13005A Power Transistor
₹ 15/PieceGet Latest Price
| Type | MOSFET |
| Transistor Type | MOSFET |
| Collector Current | 50 A |
| Collector Emitter Voltage | 1200 V |
| Collector-Emitter Voltage | 600 V |
| Drain Current | 1 A |
| Package Type | TO 220 |
| Transistor Polarity | PNP |
| Power Dissipation | 50 W |
The 13005 (MJE13005) transistor is primarily used for high-voltage, high-speed power switching applications. Common uses include switched-mode power supplies (SMPS), inverters, motor control, electronic ballasts, battery chargers, and as a general-purpose power transistor for switching and amplification in consumer and industrial electronics.
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Ir2110Strpbf Power MOSFET Module
₹ 112/PieceGet Latest Price
| Voltage | 4V |
| Model No. | Ir2110Strpbf |
| Frequency | 60 Hz |
| Packaging Type | Box |
Ir2110Strpbf Power MOSFET Module is a packaged set of MOSFET transistors (often more than one) plus supporting components (drivers, protection, sensors, etc.) designed to handle high power and simplify design in power electronics. I
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| Drain-Source Voltage (VDS) | 1200V |
| Voltage | 800V |
| Continuous Drain Current (ID) | 120A |
| Polarity | P-Channel |
| Linear Derating Factor | Irf510 Power Mosfet |
| Gate Charge (Qg) | Irf510 Power Mosfet |
| Drain Source Resistance | Irf510 Power Mosfet |
| Human Interface Input | Irf510 Power Mosfet |
| Item Code | Irf510 Power Mosfet |
The IRF510 is an N-Channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching and amplification in medium-power applications. This device is appreciated for its fast switching speeds, low cost, and ease of use in a variety of electronic projects.
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| Drain-Source Voltage (VDS) | 1200V |
| Type | N Channel |
| Voltage | 800V |
| Continuous Drain Current (ID) | 120A |
| Linear Derating Factor | IRFP2907PBF Infineon MOSFETs |
| Gate Charge (Qg) | IRFP2907PBF Infineon MOSFETs |
| Drain Source Resistance | IRFP2907PBF Infineon MOSFETs |
| Human Interface Input | IRFP2907PBF Infineon MOSFETs |
| Item Code | IRFP2907PBF Infineon MOSFETs |
The Infineon IRFP2907PBF is a high-performance, N-channel HEXFET power MOSFET designed for demanding automotive and industrial applications. It features extremely low on-resistance and is built for efficient, high-speed switching.
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2SA1941 And 2SC5198 Audio Power Transistor
₹ 150/PieceGet Latest Price
Minimum Order Quantity: 50 Piece
| Type | Power Module |
| Transistor Type | MOSFET |
| Collector Current | 50 A |
| Collector Emitter Voltage | 1200 V |
| Collector-Emitter Voltage | 600 V |
| Drain Current | 100 A |
| Package Type | TO 220 |
| Transistor Polarity | PNP |
| Power Dissipation | 50 W |
The 2SA1941 (PNP) and 2SC5198 (NPN) are a high-power complementary transistor pair designed specifically for use in the output stage of high-fidelity audio power amplifiers. They are known for their strong performance in Class A and Class AB amplifier circuits, delivering excellent linearity and low distortion.
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| Drain-Source Voltage (VDS) | 1200V |
| Voltage | 800V |
| Continuous Drain Current (ID) | 100A |
| Linear Derating Factor | TK17A80W,S4X MOSFETs Toshiba |
| Gate Charge (Qg) | TK17A80W,S4X MOSFETs Toshiba |
| Drain Source Resistance | TK17A80W,S4X MOSFETs Toshiba |
| Human Interface Input | TK17A80W,S4X MOSFETs Toshiba |
| Item Code | TK17A80W,S4X MOSFETs Toshiba |
The TK17A80W,S4X is a Toshiba N-channel power MOSFET from the DTMOSIV series, designed for switching voltage regulator applications. It is a high-voltage, high-efficiency device with a low drain-source on-resistance (RDS(ON)cap R sub cap D cap S open paren cap O cap N close paren end-sub𝑅𝐷𝑆(𝑂𝑁))
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| Drain-Source Voltage (VDS) | 1200V |
| Type | N Channel |
| Continuous Drain Current (ID) | 75A |
| Polarity | N-Channel |
| Package Type | TO-220 |
| Configuration | Single |
| Maximum Operating Junction Temperature | 175 °C |
The Infineon IRFZ48NPBF is a high-performance N-channel power MOSFET from the HEXFET series, known for its low on-resistance and high-speed switching. It is designed for robust industrial applications that require high power efficiency.
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WML13N80M3 WAYON Super Junction MOSFET 800V
₹ 70/PieceGet Latest Price
Minimum Order Quantity: 100 Piece
| Drain-Source Voltage (VDS) | 900V |
| Voltage | 800V |
| Continuous Drain Current (ID) | 100A |
| Polarity | P-Channel |
| Drain-Source On-Resistance (RDS(on)) | 1000 mΩ (1 Ω) |
| Package Type | TO-252 (DPAK) |
| Linear Derating Factor | Key specificationsDrain-Source Voltage ((V_{DSS})): 800V.Continuous Drain Current ((I_{D})): 13 |
| Total Gate Charge (Qg) | 80 nC |
| Gate Threshold Type | Standard Level |
| Maximum Operating Junction Temperature | 175 °C |
The WML13N80M3 is a high-performance 800V, 13A N-Channel Super Junction MOSFET manufactured by WAYON. Designed for high-voltage and high-efficiency power electronics, this transistor is built with the company's proprietary WMOS™ M3 technology. Key specifications
- Drain-Source Voltage (VDSScap V sub cap D cap S cap S end-sub𝑉𝐷𝑆𝑆): 800V.
- Continuous Drain Current (IDcap I sub cap D𝐼𝐷): 13A at 25°C.
- Maximum Power Dissipation (PDcap P sub cap D𝑃𝐷): 33W.
- Technology: WMOS™ M3, a Super Junction (SJ) technology that achieves very low on-resistance (RDS(on)cap R sub cap D cap S open paren o n close paren end-sub𝑅𝐷𝑆(𝑜𝑛)) and gate charge (Qgcap Q sub g𝑄𝑔).
- Package: Primarily available in TO-220FP (Fully Isolated Package) for enhanced thermal performance, and potentially TO-247, depending on the variant.
- Switching Speed: Optimized for fast switching.
- Robustness: Features high avalanche ruggedness.
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ULN2003A STMicroelectronics Transistors
₹ 5.75/PieceGet Latest Price
Minimum Order Quantity: 100 Piece
| Transistor Type | MOSFET Transistor |
| Mounting Type | Through Hole |
| Channel Type | PNP |
| Maximum Collector-Emitter Voltage | 20 V |
| Maximum Collector Current | 100mA |
| Part Number | ST |
The STMicroelectronics ULN2003A is a high-voltage, high-current Darlington transistor array. It is a monolithic integrated circuit containing seven NPN Darlington pairs with open collectors and common emitters. This design provides high current gain, allowing it to drive powerful loads from low-power logic signals
- Integrated Darlington pairs: The chip includes seven independent NPN Darlington pairs. A Darlington pair is a special configuration of two bipolar junction transistors (BJTs) that acts as a single, high-gain transistor.
- High-current output: Each channel can handle a continuous collector current of 500 mA, with peak current capabilities of 600 mA. For even higher current needs, multiple channels can be connected in parallel.
- High-voltage output: The outputs can handle up to 50 V, making the array suitable for controlling loads that operate at higher voltages than standard logic circuits.
- Input compatibility: The ULN2003A is specifically designed to be compatible with 5V TTL and CMOS logic, allowing it to be driven directly by microcontrollers and digital logic circuits.
- Internal suppression diodes: The IC includes integrated common-cathode clamp diodes. These are crucial for protecting the transistors from voltage spikes that occur when switching inductive loads like relays, solenoids, or motors.
- Simplified layout: The input pins are placed opposite the output pins in the package, which helps simplify circuit board design.
- Package type: STMicroelectronics offers the ULN2003A in a 16-pin dual in-line package (DIP), as well as surface-mount options.
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IRF9530N Power MOSFET
₹ 16/PieceGet Latest Price
| Drain-Source Voltage (VDS) | 1200V |
| Voltage | 800V |
| Continuous Drain Current (ID) | 120A |
| Linear Derating Factor | IRF9530N Power MOSFET |
| Gate Charge (Qg) | IRF9530N Power MOSFET |
| Drain Source Resistance | IRF9530N Power MOSFET |
| Human Interface Input | IRF9530N Power MOSFET |
| Item Code | IRF9530N Power MOSFET |
The IRF9530N is a P-channel Power MOSFET designed for high-performance switching applications, known for its high voltage tolerance and low on-resistance. It is manufactured by Infineon Technologies and other suppliers
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Irf9540Pbf Vishay Mosfets
₹ 25/PieceGet Latest Price
| Drain-Source Voltage (VDS) | 650V |
| Voltage | 600V |
| Continuous Drain Current (ID) | 100A |
| Linear Derating Factor | Irf9540Pbf Vishay Mosfets |
| Gate Charge (Qg) | Irf9540Pbf Vishay Mosfets |
| Drain Source Resistance | Irf9540Pbf Vishay Mosfets |
| Human Interface Input | Irf9540Pbf Vishay Mosfets |
| Item Code | Irf9540Pbf Vishay Mosfets |
The Vishay IRF9540PBF is a P-channel power MOSFET designed for high-current and fast-switching applications. Produced by Vishay Siliconix, it is a robust component suitable for use in various industrial and power management systems.
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| Drain-Source Voltage (VDS) | 900V |
| Voltage | 600V |
| Continuous Drain Current (ID) | 75A |
| Linear Derating Factor | IRF840PBF Vishay MOSFETs |
| Gate Charge (Qg) | IRF840PBF Vishay MOSFETs |
| Drain Source Resistance | IRF840PBF Vishay MOSFETs |
| Human Interface Input | IRF840PBF Vishay MOSFETs |
| Item Code | IRF840PBF Vishay MOSFETs |
The IRF840PBF is a high-voltage N-channel power MOSFET manufactured by Vishay, used primarily for high-speed switching applications. The "PBF" suffix indicates that the device is lead-free. It is housed in a standard TO-220AB package, which is suitable for industrial applications involving up to 50 watts of power dissipation
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IRFP264PBF Vishay MOSFETs
₹ 35/PieceGet Latest Price
| Drain-Source Voltage (VDS) | 1200V |
| Voltage | 800V |
| Continuous Drain Current (ID) | 120A |
The IRFP264PBF is an N-channel power MOSFET manufactured by Vishay. It is designed for applications requiring fast switching, low on-resistance, and robust design. The transistor is housed in a TO-247AC package and is suitable for commercial and industrial use in high-power applications
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| Drain-Source Voltage (VDS) | 900V |
| Type | N Channel |
| Continuous Drain Current (ID) | 100A |
The Infineon IRF3205PBF is a high-performance, N-channel power MOSFET from the HEXFET series, designed for high-current, low-voltage switching applications. This component features low on-resistance, fast switching speeds, and high reliability, making it suitable for a wide range of industrial, automotive, and power electronics applications.
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| Drain-Source Voltage (VDS) | 1200V |
| Voltage | 600V |
| Continuous Drain Current (ID) | 120A |
| Polarity | P-Channel |
| Package Type | TO-220 |
The STP90NF03L is an N-channel power MOSFET manufactured by STMicroelectronics. It is a high-performance, high-efficiency transistor with a low on-state resistance (RDS(on)cap R sub cap D cap S open paren o n close paren end-sub𝑅𝐷𝑆(𝑜𝑛)) and optimized gate charge, which is designed for applications like DC-DC converters and motor drivers.Based on the STMicroelectronics datasheet and information from distributors, here are the key specifications for the STP90NF03L: Transistor polarity: N-Channel
- Package type: TO-220-3 (Through Hole)
- Drain-source voltage (VDSScap V sub cap D cap S cap S end-sub𝑉𝐷𝑆𝑆): 30 V
- Continuous drain current (IDcap I sub cap D𝐼𝐷): 90 A at TC=25°Ccap T sub cap C equals 25 degrees cap C𝑇𝐶=25°𝐶 and 65 A at TC=100°Ccap T sub cap C equals 100 degrees cap C𝑇𝐶=100°𝐶
- Pulsed drain current (IDMcap I sub cap D cap M end-sub𝐼𝐷𝑀): 360 A
- Drain-source on-resistance (RDS(on)cap R sub cap D cap S open paren o n close paren end-sub𝑅𝐷𝑆(𝑜𝑛)): <0.0065Ωis less than 0.0065 cap omega<0.0065Ω (or 6.5 mΩ) @ ID=45A,VGS=10Vcap I sub cap D equals 45 cap A comma cap V sub cap G cap S end-sub equals 10 cap V𝐼𝐷=45𝐴,𝑉𝐺𝑆=10𝑉
- Gate-source voltage (VGScap V sub cap G cap S end-sub𝑉𝐺𝑆): ±20 V
- Total power dissipation (PTOTcap P sub cap T cap O cap T end-sub𝑃𝑇𝑂𝑇): 150 W at TC=25°Ccap T sub cap C equals 25 degrees cap C𝑇𝐶=25°𝐶
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| Type | Logic IC |
| Configuration | Dual |
| Mounting Type | DIP |
| Supply Voltage | 12V |
| Package Type | DIP |
| Brand | ST |
| Part Number | ULN2803 |
| Current | 1000V |
The STMicroelectronics ULN2803A is an integrated circuit (IC) consisting of an array of eight NPN Darlington transistors. It is designed to act as an interface between low-level logic circuits, like microcontrollers, and higher-current or higher-voltage loads.
- Darlington transistor array: The chip contains eight independent Darlington pairs, each of which functions as a high-current switch. A Darlington pair consists of two transistors connected to achieve a very high current gain.
- High-voltage and high-current capability: Each channel can handle a continuous collector current of 500 mA and can withstand voltages up to 50 V in the OFF state. For even higher current requirements, outputs can be connected in parallel.
- Integrated protection diodes: The array includes common-cathode clamp diodes for each output. These freewheeling diodes suppress inductive voltage spikes that are produced when switching inductive loads like relays and motors, protecting the IC and other circuitry.
- Logic compatibility: Built-in 2.7 kΩ series base resistors for each Darlington pair allow the IC to be driven directly by 5V TTL or CMOS logic devices without requiring additional components.
- Package and layout: The ULN2803A is commonly available in an 18-pin Dual In-line Package (DIP), with inputs and outputs pinned on opposite sides to simplify printed circuit board (PCB) layout.
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| Drain-Source Voltage (VDS) | 900V |
| Voltage | 800V |
| Continuous Drain Current (ID) | 120A |
| Polarity | P-Channel |
| Package Type | TO-220 |
| Linear Derating Factor | Irfp350Pbf Vishay Mosfets |
| Gate Charge (Qg) | Irfp350Pbf Vishay Mosfets |
| Drain Source Resistance | Irfp350Pbf Vishay Mosfets |
| Human Interface Input | Irfp350Pbf Vishay Mosfets |
| Item Code | Irfp350Pbf Vishay Mosfets |
| Total Gate Charge (Qg) | 150 nC |
| Configuration | Single |
The IRF350 is a legacy N-channel enhancement mode power MOSFET, originally produced by manufacturers like International Rectifier and Fairchild Semiconductor. Known for its rugged, hermetically sealed TO-3 package, it is designed for high-voltage, high-power switching applications. While still available from some vendors, modern alternatives like the IRFP350 are now more common.
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| Type | MOSFET |
| Transistor Type | MOSFET |
| Collector Current | 50 A |
| Collector Emitter Voltage | 1200 V |
| Collector-Emitter Voltage | 600 V |
| Drain Current | 100 A |
| Package Type | TO 220 |
| Transistor Polarity | PNP |
| Power Dissipation | 50 W |
The MJE2955 is a general-purpose PNP power transistor designed for switching and amplification applications. It is known for handling high current and power and is often housed in a robust TO-220 package with a metal mounting tab for heat dissipation.
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| Drain-Source Voltage (VDS) | 900V |
| Voltage | 800V |
| Continuous Drain Current (ID) | 100A |
The WML10N80M3 is a high-voltage, N-channel power MOSFET manufactured by WAYON. It is built with WMOS M3 technology, which is designed for superior efficiency and high-speed switching in power electronics.
Key specifications Type: N-channel, unipolar power MOSFET with an enhancement-mode channel.
- Drain-Source Voltage (VDSScap V sub cap D cap S cap S end-sub𝑉𝐷𝑆𝑆): 800V.
- Continuous Drain Current (IDcap I sub cap D𝐼𝐷): 10A.
- Power Dissipation: 31W.
- Gate-Source Voltage (VGScap V sub cap G cap S end-sub𝑉𝐺𝑆): $pm$30V.
- On-State Resistance (RDS(on)cap R sub cap D cap S open paren o n close paren end-sub𝑅𝐷𝑆(𝑜𝑛)): 1.03Ωcap omegaΩ.
- Package: TO220FP or TO-220F, a fully isolated through-hole package for improved thermal performance and mechanical stability.
- Gate Charge (Qgcap Q sub g𝑄𝑔): 13.9nC.
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Mosfet Power Modules
₹ 150/PieceGet Latest Price
| Collector Emitter Voltage | 2500 V |
| Voltage | 4V |
| Drain-Source Voltage (VDS) | 650V |
| Collector Current | 900 A |
| Continuous Drain Current (ID) | 100A |
| Module Configuration | Dual IGBT |
| Linear Derating Factor | 25C |
| Gate Charge (Qg) | 70NC |
A MOSFET Power Module is an integrated package that contains one or more power MOSFET transistors along with additional components (like diodes, drivers, or sensors) designed to handle high current and high voltage switching applications efficiently and reliably.
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| Transistor Type | MOSFET Transistor |
| Channel Type | PNP |
| Mounting Type | Through Hole |
| Maximum Collector-Emitter Voltage | 200 V |
| Maximum Collector Current | 10A |
| Part Number | L7812CV ST |
An integrated circuit (IC) is a compact electronic device that combines numerous microscopic electronic components�such as transistors, resistors, capacitors, and diodes�onto a single piece of semiconductor material, usually silicon. Basic Description: Full Name: Integrated Circuit (also called a microchip or chip) Function: Performs electronic functions like amplification, computation, signal processing, and data storage Size: Ranges from a few millimeters to centimeters Components Integrated: Thousands to billions of transistors and other elements Material: Primarily silicon, due to its semiconducting properties
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UTC 8N80L N-Channel MOSFET, 800V, 8A
₹ 20/PieceGet Latest Price
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID) | 8A |
| Polarity | N-Channel |
| Package Type | TO-220 |
| Brand | UTC |
| Part Number | UTC 8N80L |
| Power Dissipation | 59 W |
| Storage Temperature | -55 to 150 Deg C |
The UTC8N80 is an N-channel mode power MOSFET that offers customers DMOS and planar stripe technology by utilising UTC's cutting-edge technology. This innovation permits a minimum enhanced switching performance with low on-state resistance. It can also tolerate large energy pulses in the avalanche and commutation modes.
Typically, a high-efficiency switch mode power supply uses the UTC 8N80.
Features:
- RDS(ON) ≤ 1.45Ω @ VGS=10V, ID=4.0A
- Improved dv/dt Capability
- Fast Switching Speed
- 100% Avalanche Tested
- It has a small size
- It's not too costly
- Highly efficient
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| Collector Current | 200 A |
| Module Configuration | Single IGBT |
| Usage/Application | UPS |
| Current Rating | 4.5 |
| Brand | imported |
| Country of Origin | Made in India |
| Collector Emitter Voltage | 3300 V |
| Voltage | 600 V |
An IGBT (Insulated-Gate Bipolar Transistor) power module is a hybrid power semiconductor device that combines the high input impedance of a MOSFET with the high voltage and current handling of a bipolar transistor, acting as a high-speed electronic switch. It integrates multiple IGBT chips and associated components like freewheeling diodes into a single package to manage high power efficiently, making it essential for applications such as motor drives, inverters, and power supplies.
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| Repetitive Peak Off State Voltage | 600 V |
| Average On State Current | 12 A |
| Package Type | TO-220AB |
| Gate Trigger Current | 25 mA |
| Part Number | TYN612 |
| Mounting Type | Through Hole |
Thyristor TYN612 is fit for all modes of control like overvoltage crowbar protection, motor control circuit, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits.
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Irfz44Npbf Mosfet Transistor
₹ 10/PieceGet Latest Price
| Channel Type | P Channel |
| Drain-to-Source Voltage (Vds) | 600V |
| Brand | Infineon |
| Part Number | IRFZ44NPBF |
| Pin Count | 2 |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
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| Voltage | 150 V |
| Transistor Type | NPN |
| Mounting Type | SMD |
| Brand | mic |
| Part Number | bc847b |
Bc847B Transistor Mic at given base current: typically a few hundred millivolts; exact spec depends on test conditions. For example V_CE(sat) might be ~400 mV with certain base drive.
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4 Pin Round Cell Metal Connector, Brass, Male
₹ 15/PieceGet Latest Price
| Connector Type | M12 |
| No. Of Pins | 4 Pin |
| Mounting Type | Through Hole |
| Telecom/Data/Network | 4PIN |
| Electrical Fitting | 4PIN CONNECTOR |
| Frequency | 60 Hz |
| Voltage | 220 V |
| Pin | 4 Pin |
| Shape | Round |
This is an imported 4 pin cable type Mini Round Shell (MRS) Aviation Plug socket Connector. This connector is also called GX16-4Pin Aviation Plug Male And Female Pin Connector Circular Connectors Socket Plug GX16 Diameter 16mm. This Product is Known as a 4 pin Aviation Plug, 4 pin BNC connector, 4 pin Connector, 4 Pin Plug, 4pin Aviation male and Female Plug, 4Pin Aviation Connector, 4 pin Aviation Connector Plug, aviator plug, GX-12 PLUG, GX16 air plug, GX16 air plug, 4 PIN Cable Type MRS Connector, 4 Pin Aviation Cable Type MRS Connector, 4 Pin MRS Connector
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| Transistor Type | Darlington Transistor |
| Channel Type | PNP |
| Mounting Type | Through Hole |
| Maximum Collector-Emitter Voltage | 200 V |
| Maximum Collector Current | 10A |
| Part Number | BD139 CDIL |
The BD139 from Continental Device India Ltd. (CDIL) is an NPN epitaxial silicon power transistor in a TO-126 plastic package, designed for audio amplifier and driver applications, and automotive uses. Key specifications include an 80V collector-emitter breakdown voltage, a maximum continuous collector current of 1.5A, and a maximum collector peak current of 3A. It offers features like low saturation voltage, simple drive requirements, high safe operating area, and suitability for low distortion complementary designs.
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UTC 4N65L 650V 4A N Channel Power MOSFET TO 220F
₹ 10/PieceGet Latest Price
| Polarity | N Channel |
| Drain Source Voltage | 30 V |
| Drain Current | 200 mA |
| Package Type | TO-220 |
| Gate Charge | 10 nC |
| RDS On | 2 mΩ |
| Mounting Type | Through Hole |
| Body Diode | Yes |
The UTC 4N65L is a 650V, 4A N-Channel Power MOSFET in a TO-220F package, designed for high-efficiency switching applications.
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| Polarity | N Channel |
| Drain Source Voltage | 600 V |
| Drain Current | 500 mA |
| Package Type | TO-220 |
| Gate Charge | 200 nC |
| RDS On | 200 mΩ |
| Drive Voltage | 15 V |
| Mounting Type | Through Hole |
| Body Diode | Schottky |
Edison Electronics” is Trader and Retailer of Integrated Circuit, Transistors, Optocoupler, Capacitor, Microcontroller, Light Emitting Diode, Diode, Atmel Microcontroller and much more. Through the years the company has created a niche customer base through its large network of branches across India and by striving to achieve total customer satisfaction.
Under the valuable guidance of our mentor, Mr. Narpat Panwar (CEO), we are growing with a notable rate in the market. He has spent long years in the industry to have rich industrial experience enabling us to understand the varied requirements of our clients.
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SVF7N65F 650V 7A N Channel MOSFET TO220F
₹ 9/PieceGet Latest Price
| Polarity | N Channel |
| Drain Source Voltage | 30 V |
| Drain Current | 200 mA |
| Package Type | TO-220 |
| Gate Charge | 10 nC |
| Drive Voltage | 4.5 V |
| Mounting Type | Through Hole |
| Body Diode | Yes |
The SVF7N65F is a 650V, 7A N-channel high-voltage MOSFET in a fully isolated TO-220F package, designed for high-efficiency switching, power management, and industrial applications.
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| Collector-Emitter Voltage | 1200 V |
| Collector Current | 1200 A |
| Configuration | Three Phase Inverter |
| Package/Case | Module |
| NTC Thermistor | Yes |
| IGBT Type | Trench Field Stop |
| Operating Temperature | -40°C to 175°C |
| Brand | IXYS |
Edison Electronics” is Trader and Retailer of Integrated Circuit, Transistors, Optocoupler, Capacitor, Microcontroller, Light Emitting Diode, Diode, Atmel Microcontroller and much more. Through the years the company has created a niche customer base through its large network of branches across India and by striving to achieve total customer satisfaction.
Under the valuable guidance of our mentor, Mr. Narpat Panwar (CEO), we are growing with a notable rate in the market. He has spent long years in the industry to have rich industrial experience enabling us to understand the varied requirements of our clients.
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| Collector-Emitter Voltage | 650 V |
| Collector Current | 1200 A |
| Configuration | Three Phase Inverter |
| Package/Case | SOT-227-4 |
| NTC Thermistor | Yes |
| Operating Temperature | -55°C to 150°C |
| Brand | IXYS |
Edison Electronics” is Trader and Retailer of Integrated Circuit, Transistors, Optocoupler, Capacitor, Microcontroller, Light Emitting Diode, Diode, Atmel Microcontroller and much more. Through the years the company has created a niche customer base through its large network of branches across India and by striving to achieve total customer satisfaction.
Under the valuable guidance of our mentor, Mr. Narpat Panwar (CEO), we are growing with a notable rate in the market. He has spent long years in the industry to have rich industrial experience enabling us to understand the varied requirements of our clients.
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SKM400GB125D Semikron IGBT Module
₹ 325/PieceGet Latest Price
| Collector-Emitter Voltage | 1700 V |
| Collector Current | 1200 A |
| Configuration | Three Phase Inverter |
| Package/Case | Module |
| NTC Thermistor | Yes |
| IGBT Type | Trench |
| Brand | Infineon |
Edison Electronics” is Trader and Retailer of Integrated Circuit, Transistors, Optocoupler, Capacitor, Microcontroller, Light Emitting Diode, Diode, Atmel Microcontroller and much more. Through the years the company has created a niche customer base through its large network of branches across India and by striving to achieve total customer satisfaction.
Under the valuable guidance of our mentor, Mr. Narpat Panwar (CEO), we are growing with a notable rate in the market. He has spent long years in the industry to have rich industrial experience enabling us to understand the varied requirements of our clients.
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